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Jacques Faguet

Observed names: Faguet, Jacques, J. Faguet
OpenAlex ID: A5089985535
Rapid atomic layer etching of Al2O3 using sequential exposures of hydrogen fluoride and trimethylaluminum with no purging
2018 · David R. Zywotko, Jacques Faguet, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 42
Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption
2021 · G. Antoun, T. Tillocher, et al. · Scientific Reports · 38
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Cryo atomic layer etching of SiO2 by C4F8 physisorption followed by Ar plasma
2019 · G. Antoun, P. Lefaucheux, et al. · Applied Physics Letters · 38
The role of physisorption in the cryogenic etching process of silicon
2019 · G. Antoun, R. Dussart, et al. · Japanese Journal of Applied Physics · 25
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Quasi In Situ XPS on a SiO x F y Layer Deposited on Silicon by a Cryogenic Process
2022 · G. Antoun, A. Girard, et al. · ECS Journal of Solid State Science and Technology · 20
Cryogenic nanoscale etching of silicon nitride selectively to silicon by alternating SiF4/O2 and Ar plasmas
2022 · G. Antoun, T. Tillocher, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 16
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ZrO2 Monolayer as a Removable Etch Stop Layer for Thermal Al2O3 Atomic Layer Etching Using Hydrogen Fluoride and Trimethylaluminum
2020 · David R. Zywotko, Omid Zandi, et al. · Chemistry of Materials · 14
Initiated‐Chemical Vapor Deposition of Polymer Thin Films: Unexpected Two‐Regime Growth
2017 · Laetitia Bonnet, Bruce Altemus, et al. · Macromolecular Materials and Engineering · 14
Wafer Scale Insulation of High Aspect Ratio Through-Silicon Vias by iCVD
2024 · Vincent Jousseaume, Chloe Guerin, et al. · ACS Applied Materials & Interfaces · 12
Wet Atomic Layer Etching of Copper Structures for Highly Scaled Copper Hybrid Bonding and Fully Aligned Vias
2022 · Christopher Netzband, Sitaram Arkalgud, et al. · IEEE Electronic Components and Technology Conference (ECTC) · 11
Elucidating the Mechanisms of Two Unique Phenomena Governed by Particle-Particle Interaction under DEP: Tumbling Motion of Pearl Chains and Alignment of Ellipsoidal Particles
2018 · Yu Zhao, Jozef Brcka, et al. · Micromachines · 10
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Elucidating the DEP phenomena using a volumetric polarization approach with consideration of the electric double layer
2017 · Yu Zhao, Jozef Brcka, et al. · Biomicrofluidics · 10
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Filament Assisted Chemical Vapor Deposited organosilicate as chemical layer for nanometric hydrocarbon gas sensors
2018 · V. Jousseaume, C. Yeromonahos, et al. · Sensors and Actuators B Chemical · 9
Single-chamber filament-assisted chemical vapor deposition of polymer and organosilicate films for air gap interconnect formation
2011 · Eric Lee, Jacques Faguet, et al. · Thin Solid Films · 9
Elucidating the mechanism governing cell rotation under DEP using the volumetric polarization and integration method
2018 · Yu Zhao, Jozef Brcka, et al. · Biomedical Microdevices · 7
Conformal isolation of high-aspect-ratio TSVs using a low-κ dielectric deposited by filament-assisted CVD
2016 · V. Jousseaume, B. Altemus, et al. · Microelectronic Engineering · 7
Feasibility study into the deposition of an organic planarization layer using sequential polymerization initiated chemical vapor deposition
2017 · Kazuya Ichiki, Bruce Altemus, et al. · Thin Solid Films · 6
Novel dielectric deposition technology for advanced interconnect with air gap
2009 · Jacques Faguet, Eric Lee, et al. · IEEE International Interconnect Technology Conference (IITC) · 6
Single-Step, Positive-Tone, Lift-Off Process Using AZ 5214-E Resist
1988 · D. R. Dunbobbin, J. Faguet, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 4
Reliability improvement of Cu/low-k dual damascene interconnects using the depo/etch barrier process by newly developed I-PVD
2003 · K. Motoyama, J. Faguet, et al. · IEEE International Interconnect Technology Conference (IITC) · 1
Author Correction: Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption
2022 · G. Antoun, T. Tillocher, et al. · Scientific Reports
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SiOxFy layer deposition for cryogenic nanoscale etching
2021 · Antoun, Gaelle, Tillocher, Thomas, et al. · HAL
Cryo-ALE of Silicon based on SF6 physisorption
2021 · Nos, Jack, Antoun, Gaelle, et al. · HAL
Nanoscale cryogenic process for highly selective etch of Si3N4 over Si
2021 · Antoun, Gaelle, Tillocher, Thomas, et al. · HAL
Cryo-ALE of Si based on SF6 Physisorption
2021 · Nos, Jack, Tillocher, Thomas, et al. · HAL
Works count: 35
Citation count: 299
H-index: 10
I10-index: 12
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