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Dharam Pal Gosain

Observed names: D. P. Gosain, D.p. Gosain, Dharam P. Gosain, Dharam Pal Gosain Dharam Pal Gosain, GOSAIN, DHARAM PAL
Institution: Sony (Japan)
OpenAlex ID: A5090191880
Growth of silicon nanowires via gold/silane vapor–liquid–solid reaction
1997 · J. Westwater, D. P. Gosain, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 671
Some properties of Sb2Te3−xSex for nonvolatile memory based on phase transition
1991 · D. P. Gosain, T. Shimizu, et al. · Journal of Materials Science · 133
High Mobility Thin Film Transistors Fabricated on a Plastic Substrate at a Processing Temperature of 110°C
2000 · Dharam Pal Gosain, Takashi Noguchi, et al. · Japanese Journal of Applied Physics · 111
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Instability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors under Light Illumination
2009 · Dharam Pal Gosain, Tsutomu Tanaka · Japanese Journal of Applied Physics · 65
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Control of the Size and Position of Silicon Nanowires Grown via the Vapor-Liquid-Solid Technique
1997 · Jonathan Westwater, Dharam Pal Gosain Dharam Pal Gosain, et al. · Japanese Journal of Applied Physics · 64
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Si Nanowires Grown via the Vapour–Liquid–Solid Reaction
1998 · J. Westwater, D. P. Gosain, et al. · physica status solidi (a) · 51
Formation of (100)-Textured Si Film Using an Excimer Laser on a Glass Substrate
2003 · Dharam Pal Gosain, Akio Machida, et al. · Japanese Journal of Applied Physics · 33
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Nonvolatile Memory Based on Reversible Phase Transition Phenomena in Telluride Glasses
1989 · Dharam Pal Gosain, Minoru Nakamura, et al. · Japanese Journal of Applied Physics · 26
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High Performance Bottom Gate TFTs by Excimer Laser Crystallization and Post Hydrogenation
1995 · Dharam Pal Gosain, Jonathan Westwater, et al. · Japanese Journal of Applied Physics · 13
Nanoscale silicon whiskers formed by silane/gold reaction at 335 °C
1995 · J. Westwater, D.p. Gosain, et al. · Materials Letters · 11
The Characteristics and Oxidation of Vapor - Liquid - Solid Grown Si Nanowires
1996 · J. Westwater, D. P. Gosain, et al. · MRS Proceedings · 9
Excimer laser crystallized poly-Si TFTs on plastic substrates
2002 · Dharam P. Gosain · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 7
Possibility of Quasi-Single-Crystalline Semiconductor Films
1999 · T. Noguchi, S. Usui, et al. · MRS Proceedings · 5
Effects of preparation conditions of the bulk and source temperature on the composition of As2Se3 films
1991 · Tsutomu Bando, Dharam Pal Gosain, et al. · Thin Solid Films · 5
Excimer Laser Crystallized Poly-Si Thin-Film Transistors on a Plastic Substrate with Mobility of 250 cm2/V.s
2001 · Dharam P. Gosain, A. Machida, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 4
Low Temperature Si Dot Thin-Film-Transistor Memory
1999 · K. Nomoto, D. P. Gosain, et al. · MRS Proceedings · 2
Excimer-laser-crystallized poly-Si thin film transistors
2001 · Dharam P. Gosain · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1
High Performance Bottom Gate TFTs by Excimer Laser Crystallization and Post Hydrogenation
1994 · D. P. Gosain, J. Westwater, et al. · International Conference on Solid State Devices and Materials (SSDM) · 1
Low Temperature poly-Si TFTs for Mobile Display Applications
2008 · Dharam Pal Gosain
Untitled
2001 · Dharam Pal Gosain · Shinku
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基板温度110℃で作製した低温poly-Si TFT
2000 · Dharam Pal Gosain, 節夫 碓井, et al. · SIAM International Conference on Data Mining
Poly-Si TFTs Fabricated at a Substrate Temperature of 110℃
2000 · Dharam Pal Gosain, S. Usui, et al. · 電子情報通信学会技術研究報告. ED, 電子デバイス
A dry lift-off process using laser ablation technique.
1992 · 佐野直樹, 鮫島俊之, et al. · 応用物理学会学術講演会講演予稿集
A study of amorphous semiconductors for nonvolatile memory devices
1991 · Dharam Pal Gosain
Study of doped amorphous germanium chalcogenide semi conductors
1987 · Dharam Pal Gosain · Shodhganga
Works count: 26
Citation count: 1,212
H-index: 10
I10-index: 10
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