Year: 2003
Type: article
Abstract: We investigated the texture of excimer-laser crystallized Si film. For the first time, Si thin films with more than 96% (100) texture have been produced using excimer-laser crystallization of a-Si on a glass substrate. The (100) textured film has rectangular grains with edges parallel to the (110) direction. Results of scanning electron microscopy (SEM), electron backscatter diffraction patterns (EBSP), X-ray diffraction and transmission electron microscopy (TEM) are presented. The results are interpreted on the basis of Si/SiO 2 interface energy and a new grain-selection model.
DOI: 10.1143/jjap.42.l135
Institution: Sony (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2018376760
