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Kazushi Nakano
Observed names:
K Nakano,
K. Nakano,
Kazushi NAKANO,
Nakano, Kazushi
Institution:
Tokyo University of Science
Observed institutions:
Sony (Taiwan),
Tokyo University of Science,
Trinity College Dublin,
Sony Corporation (United States),
Sony (Japan),
Rockwell International (United States),
University of Bath,
The University of Osaka
show all 8
OpenAlex ID:
A5111588435
Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy
1991
·
Hiroyuki Okuyama
, Kazushi Nakano
, et al.
·
Japanese Journal of Applied Physics
·
281
100 h II-VI blue-green laser diode
1996
·
S. Taniguchi
, T. Hino
, et al.
·
Electronics Letters
·
231
Room temperature continuous operation of blue-green laser diodes
1993
·
N. Nakayama
, S. Itoh
, et al.
·
Electronics Letters
·
203
Epitaxial growth of ZnMgSSe on GaAs substrate by molecular beam epitaxy
1992
·
Hiroyuki Okuyama
, Kazushi Nakano
, et al.
·
Journal of Crystal Growth
·
132
Continuous-wave operation of 489.9 nm blue laser diode at room temperature
1993
·
N. Nakayama
, S. Itoh
, et al.
·
Electronics Letters
·
100
Structural study of defects induced during current injection to II–VI blue light emitter
1995
·
S. Tomiya
, E. Morita
, et al.
·
Applied Physics Letters
·
73
MOCVD growth of AlGaInP at atmospheric pressure using triethylmetals and phosphine
1986
·
M. Ikeda
, K. Nakano
, et al.
·
Journal of Crystal Growth
·
60
ZnCdSe/ZnSSe/ZnMgSSe SCH Laser Diode with a GaAs Buffer Layer
1994
·
Satoshi Itoh
, Norikazu Nakayama
, et al.
·
Japanese Journal of Applied Physics
·
55
Current status and future prospects of ZnSe-based light-emitting devices
2000
·
Satoshi Itoh
, Kazushi Nakano
, et al.
·
Journal of Crystal Growth
·
53
A study of internal absorption in Zn(Cd)Se/ZnMgSSe semiconductor lasers
1994
·
K. Kondo
, M. Ukita
, et al.
·
Journal of Applied Physics
·
41
Room-temperature continuous-wave operation of an AlGaInP mesa stripe laser
1986
·
Masao Ikeda
, Kazushi Nakano
, et al.
·
Applied Physics Letters
·
41
680-nm band GaInP/AlGaInP tapered stripe laser
1987
·
M. Ikeda
, H. Sato
, et al.
·
Applied Physics Letters
·
37
Formation of (100)-Textured Si Film Using an Excimer Laser on a Glass Substrate
2003
·
Dharam Pal Gosain
, Akio Machida
, et al.
·
Japanese Journal of Applied Physics
·
33
PDF
Room-temperature continuous-wave operation of a GaInP/AlGaInP multiquantum well laser grown by metalorganic chemical vapor deposition
1987
·
M. Ikeda
, A. Toda
, et al.
·
Applied Physics Letters
·
31
Cathodoluminescence study of degradation in ZnSe-based semiconductor laser diodes
1998
·
A. Toda
, K. Nakano
, et al.
·
Applied Physics Letters
·
28
Effects of ordering on the operation of AlGaInP lasers grown by metalorganic chemical vapor deposition
1992
·
K. Nakano
, A. Toda
, et al.
·
Applied Physics Letters
·
28
Microscopic defect induced slow-mode degradation in II–VI based blue–green laser diodes
2000
·
Masahiro Adachi
, Zaw Min Aung
, et al.
·
Journal of Crystal Growth
·
26
491-nm ZnCeSe/ZnSe/ZnMgSSe SCH Laser Diode with a Low Operating Voltage
1993
·
Satoshi Itoh
, Norikazu Nakayama
, et al.
·
Japanese Journal of Applied Physics
·
26
PDF
ZnCdSe/ZnSe/ZnMgSSe Separate-Confinement Heterostructure Laser Diode with Various Cd Mole Fractions
1994
·
Satoshi Itoh
, Norikazu Nakayama
, et al.
·
Japanese Journal of Applied Physics
·
24
Room temperature pulsed operation of blue laserdiodes
1994
·
H. Okuyama
, S. Itoh
, et al.
·
Electronics Letters
·
24
Surface morphology changes in ZnSe-related II–VI epitaxial films grown by molecular beam epitaxy
1997
·
S. Tomiya
, R. Minatoya
, et al.
·
Journal of Applied Physics
·
23
Optical measurement of the ambipolar diffusion length in a ZnCdSe–ZnSe single quantum well
1997
·
F. P. Logue
, D. T. Fewer
, et al.
·
Journal of Applied Physics
·
23
Band-to-band recombination in Ga0.5In0.5P
1994
·
U. Strauss
, W. W. Rühle
, et al.
·
Journal of Applied Physics
·
23
Degradation of II-VI blue-green semiconductor lasers
1998
·
Shun-Lien Chuang
, N. Nakayama
, et al.
·
IEEE Journal of Quantum Electronics
·
22
Structural study of degraded ZnMgSSe blue light emitters
1996
·
K. Nakano
, S. Tomiya
, et al.
·
Journal of Electronic Materials
·
21
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Works count:
66
Citation count:
1,812
H-index:
23
I10-index:
32
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