Work

MOCVD growth of AlGaInP at atmospheric pressure using triethylmetals and phosphine

Year: 1986

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/0022-0248(86)90327-1

Authors: M. Ikeda, K. Nakano, Y. Mori, K. Kaneko, N. Watanabe

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Tehran University of Medical Sciences and Health Services

OpenAlex ID: W2085409358

FWCI: 3.483

Cites: 15

Cited by: 60

Related to: 10