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Author

Shikun He

Observed names: He Shi-Kun, S. K. He
Institution: Zhipu AI (China)
ORCID: 0000-0003-0351-2485
Observed ORCID: 0000-0003-0351-2485
OpenAlex ID: A5100680472
Achieving High Yield of Perpendicular SOT-MTJ Manufactured on 300 mm Wafers
2024 · Wenlong Yang, Zhenghui Ji, et al. · IEEE Electron Device Letters · 16
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Probabilistic greedy algorithm solver using magnetic tunneling junctions for traveling salesman problem
2025 · Ran Zhang, Xiaohan Li, et al. · Nature Communications · 15
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Magnetic-Field Orientation Dependence of Thermal Stability in Perpendicular STT-MRAM
2024 · Zhengren Yan, Pengqi Lu, et al. · IEEE Electron Device Letters · 6
Area and Energy Efficient SOT-MRAM Bit Cell Based on 3 Transistors With Shared Diffusion Regions
2023 · Enlong Liu, Kunkun Li, et al. · IEEE Transactions on Circuits & Systems II Express Briefs · 6
Manufacturing-Friendly SOT-MTJ Device With High Reliability and Switching Efficiency
2025 · Lei Zhao, Shasha Wang, et al. · IEEE Electron Device Letters · 5
High TMR Over 156% in Perpendicular SOT-MRAM Realized With Channel Engineering
2025 · D. G. Zeng, Y. Gao, et al. · IEEE Electron Device Letters · 4
Realizing high-performance, enhanced write endurance of low-RA STT-MRAM through MgO tunnel barrier engineering
2026 · Kunkun Li, Xiaolei Yang, et al. · Journal of Semiconductors · 2
Co-optimizing of H-curing, stress, and thermal annealing—A more effective way for realizing FEOL-BEOL compatible eMRAM chip
2024 · Zhimeng Yu, Xiaolei Yang, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 1
High-efficiency array-level MRAM parameters extraction with the device-in-series test structure
2022 · Zeyu Zhang, Shifan Gao, et al. · Journal of Applied Physics · 1
Raman analysis of the microstructures of nano-silicon coatings grown on different substrates
2021 · Li Wang, Bin Dong, et al. · National Conference on Laser Technology and Optoelectronics (LTO) · 1
Method for calculating optical constants of weakly absorbing coatings
2019 · Gang Wang, Shikun He, et al. · Laser Physics · 1
Temperature-dependent far-infrared properties of Bi 12 GeO 20 single crystal
2009 · Muhammad Kamran, Dai Yao-Min, et al. · Chinese Physics B · 1
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Noise-Resilient Probability Control of 1T--1MTJ Probabilistic Bits Using SOI MOSFET Back Gates
2026 · Yijun Qian, Jiangjiang Li, et al. · IEEE Transactions on Electron Devices
The magnetic immunity of perpendicular STT-MRAM
2026 · Zhengren Yan, Pengqi Lu, et al. · Journal of Magnetism and Magnetic Materials
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Built-in-wafer current-in-plane tunneling technique for reliable in-line characterization of magnetic tunnel junctions with low RA
2026 · Ming Wang, Junlu Gong, et al. · Journal of Magnetism and Magnetic Materials
Direct Characterization of Self-Heating in SOT-MRAM Using the 3 ω Method
2026 · Guansong Li, Lei Zhao, et al. · IEEE Electron Device Letters
Robust Magnetic Immunity (360 mT for Retention and 63 mT for Write) of High-Endurance (10 12 ) STT-MRAM: From Mechanism to Solution
2026 · Pengqi Lu, Zhengren Yan, et al. · IEEE International Reliability Physics Symposium proceedings
High-Performance SOT-MRAM With 52 ppm Raw Bit Error Rate and 1 ppm Write Error Rate via Novel Writing Scheme on 300-mm Wafers
2026 · Yi Xu, Chao Wang, et al. · IEEE Electron Device Letters
Field-free spin–orbit torque switching enabled by controllable domain wall chirality
2026 · Peiyue Yu, Meiyin Yang, et al. · Materials Futures
A Scheme for Field-free p-SOT-MTJ by Utilizing Oersted Field from Metal Interconnects
2026 · Dingsong Jiang, Cancheng Xiao, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
An Efficient Short-Aware Error-Correcting Method for Improving the Reliability of STT-MRAM
2026 · Yaxing Zhou, Pengqi Lu, et al. · IEEE Transactions on Nanotechnology
High-Yield Etch Processes With Enhanced Performance of SOT-MRAM Devices on 300-mm Wafers
2025 · Zhenghui Ji, Guoxiu Qiu, et al. · IEEE Transactions on Electron Devices
Enhancing device performance through shape design in channel-less SOT-MRAM
2025 · Wenlong Yang, Kaiyuan Zhou, et al. · Journal of Physics D Applied Physics
Dynamic Step-Size Single-Write Pattern Trimming for STT-MRAM Reference Resistance Optimization
2025 · Chenxi Liu, Yaxing Zhou, et al. · Proceedings - Asian Test Symposium/Proceedings
Magnetoresistance sensors with CoCr ferromagnetic films
2025 · Mingbo Chen, Yichao Zhou, et al. · Journal of Magnetism and Magnetic Materials
Works count: 27
Citation count: 59
H-index: 5
I10-index: 2
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