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Tsutomu Tezuka

Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance
2008 · Shinichi Takagi, Toshifumi Iisawa, et al. · IEEE Transactions on Electron Devices · 343
Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique
2003 · Shu Nakaharai, Tsutomu Tezuka, et al. · Applied Physics Letters · 262
A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs
2001 · Tsutomu Tezuka, Naoharu Sugiyama, et al. · Japanese Journal of Applied Physics · 186
High-performance poly-Ge short-channel metal–oxide–semiconductor field-effect transistors formed on SiO2layer by flash lamp annealing
2014 · Koji Usuda, Yoshiki Kamata, et al. · Applied Physics Express · 76
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Thin-body Ge-on-insulator p-channel MOSFETs with Pt germanide metal source/drain
2005 · Tatsuro Maeda, Keiji Ikeda, et al. · Thin Solid Films · 66
Device Design and Electron Transport Properties of Uniaxially Strained-SOI Tri-Gate nMOSFETs
2008 · Toshifumi Irisawa, Toshinori Numata, et al. · IEEE Transactions on Electron Devices · 49
Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation
2004 · Koji Usuda, Tomohisa Mizuno, et al. · Applied Surface Science · 49
Operation of inverter and ring oscillator of ultrathin-body poly-Ge CMOS
2014 · Yoshiki Kamata, Masahiro Koike, et al. · Applied Physics Express · 39
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Relaxed SiGe-on-insulator substrates without thick SiGe buffer layers
2002 · Tomohisa Mizuno, Naoharu Sugiyama, et al. · Applied Physics Letters · 38
Dislocation-free relaxed SiGe-on-insulator mesa structures fabricated by high-temperature oxidation
2003 · Tsutomu Tezuka, Naoharu Sugiyama, et al. · Journal of Applied Physics · 36
Electron Transport Properties of Ultrathin-body and Tri-gate SOI nMOSFETs with Biaxial and Uniaxial Strain
2006 · Toshifumi Irisawa, Toshinori Numata, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 34
Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process
2005 · Tsutomu Tezuka, Yoshihiko Moriyama, et al. · Thin Solid Films · 34
Strained SOI/SGOI dual-channel CMOS technology based on the Ge condensation technique
2006 · Tsutomu Tezuka, Shu Nakaharai, et al. · Semiconductor Science and Technology · 32
Spontaneous Emission Enhancement in Pillar-Type Microcavities
1993 · Tsutomu Tezuka, Shin-ya Nunoue, et al. · Japanese Journal of Applied Physics · 32
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Physical Understanding of Strain-Induced Modulation of Gate Oxide Reliability in MOSFETs
2008 · Toshifumi Irisawa, Toshinori Numata, et al. · IEEE Transactions on Electron Devices · 29
Strain analysis in ultrathin SiGe-on-insulator layers formed from strained Si-on-insulator substrates by Ge-condensation process
2007 · Tsutomu Tezuka, Norio Hirashita, et al. · Applied Physics Letters · 29
High-Mobility and H2-Anneal Tolerant InGaSiO/InGaZnO/InGaSiO Double Hetero Channel Thin Film Transistor for Si-LSI Compatible Process
2018 · Nobuyoshi Saito, Kentaro Miura, et al. · IEEE Journal of the Electron Devices Society · 25
Self-limiting growth of ultrathin Ga2O3for the passivation of Al2O3/InGaAs interfaces
2013 · Wipakorn Jevasuwan, Tatsuro Maeda, et al. · Applied Physics Express · 25
Electron Mobility and Short-Channel Device Characteristics of SOI FinFETs With Uniaxially Strained (110) Channels
2009 · Toshifumi Irisawa, Kimitoshi Okano, et al. · IEEE Transactions on Electron Devices · 24
High-mobility and low-parasitic resistance characteristics in strained Ge nanowire pMOSFETs with metal source/drain structure formed by doping-free processes
2012 · Keiji Ikeda, Mizuki Ono, et al. · Symposium on VLSI Technology · 22
High-k/Ge p- & n-MISFETs with strontium germanide interlayer for EOT scalable CMIS application
2010 · Yoshiki Kamata, Keiji Ikeda, et al. · Symposium on VLSI Technology · 20
Fabrication and device characteristics of strained-Si-on-insulator (strained-SOI) CMOS
2003 · Shin-ichi Takagi, Tomohisa Mizuno, et al. · Applied Surface Science · 20
Fabrication of nano-crystal silicon on SiO2 using the agglomeration process
1998 · Naoharu Sugiyama, Tsutomu Tezuka, et al. · Journal of Crystal Growth · 18
Modulation of NiGe/Ge Contact Resistance by S and P Co-introduction
2011 · Masahiro Koike, Yuuichi Kamimuta, et al. · Applied Physics Express · 17
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Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2hybrid buried oxide layers
2014 · Yoshihiko Moriyama, Keiji Ikeda, et al. · Applied Physics Express · 16
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Works count: 158
Citation count: 1,909
H-index: 20
I10-index: 42
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