Work

Fabrication and device characteristics of strained-Si-on-insulator (strained-SOI) CMOS

Year: 2003

Type: article

Source: Applied Surface Science

DOI: 10.1016/j.apsusc.2003.08.070

Authors: Shin-ichi Takagi, Tomohisa Mizuno, Tsutomu Tezuka, Naoharu Sugiyama, Toshinori Numata, Koji Usuda, Yoshihiko Moriyama, Shu Nakaharai, Junji Koga, Akihito Tanabe, Tatsuro Maeda

Institutions: Association of Super-Advanced Electronics, National Institute of Advanced Industrial Science and Technology

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W2012294571

FWCI: 0.669

Cites: 24

Cited by: 20

Related to: 10