Author

Akihito Tanabe

Observed name: A. Tanabe

Institutions: Kawasaki Medical School, Kawasaki Medical School Hospital

Observed institutions: Tokyo Institute of Technology, NEC (Japan), Toshiba (Japan), Pennsylvania State University, Kawasaki Medical School, Association of Super-Advanced Electronics, Kawasaki Medical School Hospital, National Institute of Advanced Industrial Science and Technology

OpenAlex ID: A5111460239

Channel structure design, fabrication and carrier transport properties of strained-Si/SiGe-on-insulator (strained-SOI) MOSFETs

2004 · S. Takagi, T. Mizuno, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 90

Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect

2014 · Yukinori Morita, Takahiro Mori, et al. · IEEE Electron Device Letters · 59

Unexpected equivalent-oxide-thickness dependence of the subthreshold swing in tunnel field-effect transistors

2014 · Takahiro Mori, Tetsuji Yasuda, et al. · Applied Physics Express · 41

The Role of Hydrogen Radicals in the Growth of a-Si and Related Alloys

1986 · Shunri Oda, Shun'ichi Ishihara, et al. · Japanese Journal of Applied Physics · 38

A compact model for tunnel field-effect transistors incorporating nonlocal band-to-band tunneling

2013 · K. Fukuda, T. Mori, et al. · Journal of Applied Physics · 28

Synthetic electric field tunnel FETs: Drain current multiplication demonstrated by wrapped gate electrode around ultrathin epitaxial channel

2013 · Yukinori Morita, Takahiro Mori, et al. · Symposium on VLSI Technology · 27

Surface induced state on ZrC(111): Angle-resolved photoemission study

1996 · K. Edamoto, T. Anazawa, et al. · Solid State Communications · 22

Fabrication and device characteristics of strained-Si-on-insulator (strained-SOI) CMOS

2003 · Shin-ichi Takagi, Tomohisa Mizuno, et al. · Applied Surface Science · 20

Tunnel Field-Effect Transistor with Epitaxially Grown Tunnel Junction Fabricated by Source/Drain-First and Tunnel-Junction-Last Processes

2013 · Yukinori Morita, Takahiro Mori, et al. · Japanese Journal of Applied Physics · 17

Performance enhancement of partially and fully depleted strained-SOI MOSFETs

2006 · T. Numata, T. Irisawa, et al. · IEEE Transactions on Electron Devices · 17

Preparation of Highly Photoconductive a-SiGex from Fluorides by Controlling Reactions with Atomic Hydrogen

1986 · Naoki Shibata, Akihito Tanabe, et al. · Japanese Journal of Applied Physics · 17

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A 2/3-inch 2 M-pixel IT-CCD image sensor with individual p-wells for separate V-CCD and H-CCD formation

2002 · M. Morimoto, K. Orihara, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 16

Interaction of hydrogen with ZrC(111) surface: angle-resolved photoemission study

1996 · S. Tokumitsu, T. Anazawa, et al. · Surface Science · 15

A standard-television compatible 648*487 pixel Schottky-barrier infrared CCD image sensor

1992 · K. Konuma, S. Tohyama, et al. · IEEE Transactions on Electron Devices · 14

Design of multiple layered a-Si:H(F)/a-SiGex:H(F) films for enhancement in photoresponse in the near-infrared spectrum

1986 · H. Shirai, A. Tanabe, et al. · Applied Physics A · 14

Predictivity of the non-local BTBT model for structure dependencies of tunnel FETs

2014 · Koichi Fukuda, Takahiro Mori, et al. · International Workshop on Computational Electronics · 13

Performance enhancement of partially- and fufly-depleted strained-SOI MOSFETs and characterization of strained-Si device parameters

2005 · T. Numata, T. Trisawa, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 13

A 1/2 inch 1.3 M-pixel progressive-scan IT-CCD for still and motion picture applications

2002 · T. Yamada, K. Hatano, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 13

Hole Transport in a-Si:H(F) Prepared by Hydrogen-Radical-Assisted Chemical Vapor Deposition

1986 · Naoki Shibata, Akihiro Miyauchi, et al. · Japanese Journal of Applied Physics · 13

Designing New Materials with Amorphous Semiconductors–Structure and Electrical Properties of Multiply Stacked a-Si/a-SiGex Layers–

1986 · Hajime Shirai, Akihito Tanabe, et al. · Japanese Journal of Applied Physics · 13

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Advanced breast cancer in a relatively young man with severe obesity and type 2 diabetes mellitus

2017 · Atsushi Obata, Seizo Okauchi, et al. · Journal of Diabetes Investigation · 12

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A 1/4-inch 380 k pixel IT-CCD image sensor employing gate-assisted punchthrough read-out mode

1995 · N. Mutoh, K. Orihara, et al. · IEEE Transactions on Electron Devices · 12

Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model

2014 · Yukinori Morita, Takahiro Mori, et al. · Solid-State Electronics · 9

Performance limit of parallel electric field tunnel FET and improvement by modified gate and channel configurations

2013 · Y. Morita, T. Mori, et al. · European Solid-State Device Research Conference · 9

First demonstration of drain current enhancement in SOI tunnel FET with vertical-tunnel-multiplication

2012 · Y. Morita, T. Mori, et al. · IEEE International SOI Conference (SOI) · 8

Works count: 65

Citation count: 630

H-index: 14

I10-index: 22