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Aleksey I. Mikhaylov

Observed names: A. I. Mikhaylov, A.I. Mikhaylov, Aleksey Mikhaylov
OpenAlex ID: A5100907388
Effect of Phosphorus Implantation Prior to Oxidation on Electrical Properties of Thermally Grown SiO2/4H-SiC MOS Structures
2014 · Aleksey Mikhaylov, Tomasz Sledziewski, et al. · Materials science forum · 8
Reduction of Density of 4H-SiC / SiO2 Interface Traps by Pre-Oxidation Phosphorus Implantation
2014 · Tomasz Sledziewski, Aleksey Mikhaylov, et al. · Materials science forum · 7
On the ion implantation of phosphorus as a method for the passivation of states at the interface between 4H-SiC and SiO2 produced by thermal oxidation in dry oxygen
2014 · A. I. Mikhaylov, A. V. Afanasiev, et al. · Semiconductors · 6
High-Power 4H-SiC MOSFET with an Epitaxial Buried Channel
2020 · A. I. Mikhaylov, A. V. Afanasyev, et al. · Semiconductors · 5
Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide
2016 · A. I. Mikhaylov, A. V. Afanasyev, et al. · Semiconductors · 4
High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N2O Atmosphere
2016 · Aleksey I. Mikhaylov, Sergey A. Reshanov, et al. · Materials science forum · 3
Inversion-Channel MOS Devices for Characterization of 4H-SiC/SiO2 Interfaces
2015 · A.I. Mikhaylov, Alexey V. Afanasyev, et al. · Materials science forum · 3
Tailoring the 4H-SiC/SiO 2 MOS-interface for SiC-based power switches
2016 · Aleksey I. Mikhaylov, Alexey V. Afanasyev, et al. · Japanese Journal of Applied Physics · 2
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Passivation of 4H-SiC/SiO2 Interface Traps by Oxidation of a Thin Silicon Nitride Layer
2015 · A.I. Mikhaylov, Alexey V. Afanasyev, et al. · Materials science forum · 2
Comparative Study of 4H-SiC DMOSFETs with N2O Thermal Oxide and Deposit Oxide with Post Oxidation Anneal
2014 · Cheng Tyng Yen, Chien Chung Hung, et al. · Materials science forum · 2
PECVD and Thermal Gate Oxides on 3C vs. 4H SiC – Impact on Leakage, Traps and Energy Offsets
2014 · Tomasz Gutt, Henryk Maria Przewlocki, et al. · ECS Transactions · 1
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PECVD and Thermal Gate Oxides on 3C Vs. 4H SiC – Impact on Traps, Leakage and Energy Offsets
2014 · Tomasz Gutt, Henryk Maria Przewlocki, et al. · ECS Meeting Abstracts · 1
Alternative method of interface traps passivation by introducing of thin silicon nitride layer at 4H-SiC/SiO2 interface
2014 · Aleksey I. Mikhaylov, Alexey V. Afanasyev, et al. · MRS Proceedings · 1
Tailoring the 4H-SiC/SiO
2016 · Aleksey Mikhaylov, Alexey V. Afanasyev, et al. · Japanese Journal of Applied Physics
Method for increasing the carrier mobility in the channel of the 4H-SiC MOSFET
2016 · A. I. Mikhaylov, A. V. Afanasyev, et al. · Semiconductors
Works count: 15
Citation count: 45
H-index: 4
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