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Shinichi Kato

Observed names: Shin'ichi Kato, Shin-ichi KATO, Shin-ichi Kato
ORCID: 0000-0002-5236-0548
Observed ORCID: 0000-0002-5236-0548
OpenAlex ID: A5100993521
In situ Si Wafer Surface Temperature Measurement during Flash Lamp Annealing
2010 · Yoshiro Yamada, Takayuki Aoyama, et al. · Japanese Journal of Applied Physics · 15
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Fabrication of thin ferroelectric Hf0.5Zr0.5O2 films by millisecond flash lamp annealing
2023 · Hideaki Tanimura, Yuto Ota, et al. · Japanese Journal of Applied Physics · 12
Low-thermal-budget crystallization of ferroelectric Al:HfO2 films by millisecond flash lamp annealing
2024 · Hideaki Tanimura, Yuma Ueno, et al. · Japanese Journal of Applied Physics · 8
Advanced Flash Lamp Annealing technology for 22nm and further device
2010 · Hiroki Kiyama, Shinichi Kato, et al. · International Workshop on Junction Technology · 8
Flexibly controllable Sub-Second Flash Lamp Annealing
2008 · Hiroki Kiyama, Tatsufumi Kusuda, et al. · International Workshop on Junction Technology · 8
Conformal SDE doping for FinFETs using an arsenic-doped Sol-Gel Coating (SGC) and Flash Lamp Annealing (FLA)
2017 · Kazuhiko Fuse, Hideaki Tanimura, et al. · International Workshop on Junction Technology · 7
Nanometer-deep junctions with high doping concentration for Ge SDEs using solid source doping and flash lamp annealing
2017 · Hideaki Tanimura, Kazuhiko Fuse, et al. · International Workshop on Junction Technology · 6
High re-activation and precise diffusion control of epitaxial Si:P layers using flash lamp annealing
2025 · Yuma Ueno, Hideaki Tanimura, et al. · MRS Advances · 5
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Ultra-rapid cooling in the millisecond timescale for the enhancement of polarization properties in Al:HfO2 thin films using flash lamp annealing
2024 · Hideaki Tanimura, Tomoya Mifune, et al. · Japanese Journal of Applied Physics · 5
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Engineering ferroelectric interfaces: Delta-doping and millisecond flash lamp annealing for enhancing polarization properties in TiN/Al:HfO2/TiN capacitors
2025 · Hideaki Tanimura, Tomoya Mifune, et al. · Applied Physics Letters · 3
High activation reaching supersaturation achieved by short-duration flash lamp annealing
2018 · Hideaki Tanimura, Kenji Inoue, et al. · International Workshop on Junction Technology · 3
Multi-functional annealing using flexibly-shaped-pulse flash lamp annealing (FSP-FLA) for high-k/metal gated CMOS devices
2009 · Takayuki Aoyama, Shin-ichi Kato, et al. · International Workshop on Junction Technology · 3
Improvement in the polarization properties in thin ferroelectric Hf0.5Zr0.5O2 films by two-step flash lamp annealing
2024 · Hideaki Tanimura, Yuto Ota, et al. · Japanese Journal of Applied Physics · 2
Low Specific Contact Resistivity Measurements using a New Test Structure and its Reduction to 10−9 ohm-cm2 in p-type SiGe/Metal Contacts using Flash Lamp Annealing
2019 · Hideaki Tanimura, Hikaru Kawarazaki, et al. · International Workshop on Junction Technology · 2
Precise Diffusion Control in the Nanometer Range in n+/p and p+/n Ge Using Ion Implantation and Flash Lamp Annealing
2018 · Hideaki Tanimura, Hikaru Kawarazaki, et al. · International Conference on Ion Implantation Technology · 2
A novel approach for highly activated p+ diffusion layer formation in germanium by pre-heating oxygen desorption before ion implantation
2017 · Tetsuya Igo, Takahiro Higuchi, et al. · International Workshop on Junction Technology · 2
Minimization of threshold voltage variation to AVT=1.3mVµm in bulk high-k/metal gated devices by dopant-diffusion control using integrated FSP-FLA technology
2010 · Shinichi Kato, Takayuki Aoyama, et al. · Symposium on VLSI Technology · 2
Flexibly-Shaped-Pulse flash lamp annealing with assisted temperature control (FSP-FLAplus) to realize a wide range of annealing conditions
2010 · Shinichi Kato, Takashi Onizawa, et al. · International Workshop on Junction Technology · 2
Anomalous behavior in the dependence of carrier activation on implant dose for extremely shallow source/drain extensions activated by flash lamp annealing
2009 · Shinichi Kato, Takashi Onizawa, et al. · International Workshop on Junction Technology · 2
Study of Ultra-shallow Junctions Formed by Flash Lamp Annealing to Reveal Dopant Activation Phenomenon
2007 · Shinichi Kato, Takayuki Aoyama, et al. · International Workshop on Junction Technology · 2
Newly Developed Heat Source Combined with Short-Duration Flash Lamp Annealing (FLA) Featuring a Low Thermal Budget and Low Environmental Load
2021 · Hideaki Tanimura, Masashi Furukawa, et al. · International Workshop on Junction Technology · 1
Conformal Doping with High Dopant Concentration for n+/p and p+/n Si junctions in 3D Devices Using Sol-Gel Coating and Flash Lamp Annealing
2018 · Kazuhiko Fuse, Hideaki Tanimura, et al. · International Conference on Ion Implantation Technology · 1
Dopant Activation Phenomenon by Flash Lamp Annealing
2008 · Shinichi Kato, Yasuo Nara, et al. · ECS Transactions · 1
Study of boron activation by flash lamp annealing from a view of depth dependence in silicon substrate
2008 · Takayuki Aoyama, Shinichi Kato, et al. · International Workshop on Junction Technology · 1
Surface-Reaction-Controlled Initial Growth of Ir-Rich IrTe x Thin Films via ABC-Type Atomic Layer Deposition
2026 · Minji Kim, Jaehyeok Kim, et al. · Nano Letters
Works count: 53
Citation count: 103
H-index: 6
I10-index: 2
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