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Atanu Kundu

Observed names: A Kundu, A. Kundu
ORCID: 0000-0003-3536-8393
Observed ORCID: 0000-0003-3536-8393
OpenAlex ID: A5101523636
Influence of Underlap on Gate Stack DG-MOSFET for analytical study of Analog/RF performance
2016 · Atanu Kundu, Arpan Dasgupta, et al. · Superlattices and Microstructures · 55
Analytical modeling of label free biosensor using charge plasma based gate underlap dielectric modulated MOSFET
2017 · Manash Chanda, Rahul Das, et al. · Superlattices and Microstructures · 44
Subthreshold analog/RF performance of underlap DG FETs with asymmetric source/drain extensions
2012 · Kalyan Koley, Binit Syamal, et al. · Microelectronics Reliability · 37
Comparative Study of Variations in Gate Oxide Material of a Novel Underlap DG MOS-HEMT for Analog/RF and High Power Applications
2019 · Arnab Mondal, Akash Roy, et al. · Silicon · 34
Impact of gate metal work-function engineering for enhancement of subthreshold analog/RF performance of underlap dual material gate DG-FET
2014 · Atanu Kundu, Kalyan Koley, et al. · Microelectronics Reliability · 34
Influence of Channel Thickness on Analog and RF Performance Enhancement of an Underlap DG AlGaN/GaN based MOS-HEMT Device
2019 · Akash Roy, Rajrup Mitra, et al. · Devices for Integrated Circuit (DevIC) · 20
Analysis of high-k spacer on symmetric underlap DG-MOSFET with Gate Stack architecture
2016 · Rahul Das, Shramana Chakraborty, et al. · Superlattices and Microstructures · 20
Enhancement in Analog/RF and Power Performance of Underlapped Dual-Gate GaN-Based MOSHEMTs with Quaternary InAlGaN Barrier of Varying Widths
2021 · Hrit Mukherjee, Mousiki Kar, et al. · Journal of Electronic Materials · 16
Two-dimensional modeling of the underlap graded-channel FinFET
2020 · Ankush Chattopadhyay, Atanu Kundu, et al. · Journal of Computational Electronics · 16
A Comparative Analysis of Analog Performances of Underlapped Dual Gate AlGaN/GaN Based MOS-HEMT and Schottky-HEMT
2020 · Hrit Mukherjee, Rajanya Dasgupta, et al. · IEEE Calcutta Conference (CALCON) · 15
Comparisons between Dual and Tri Material Gate on a 32 nm Double Gate MOSFET
2016 · Arpan Dasgupta, Rahul Das, et al. · NANO · 15
Analog/RF and Power Performance Analysis of an Underlap DG AlGaN/GaN Based High-K Dielectric MOS-HEMT
2021 · Akash Roy, Rajrup Mitra, et al. · Silicon · 14
Impact of Lateral Straggle on the Analog/RF Performance of Asymmetric Gate Stack Double Gate MOSFET
2016 · Gollamudi Sai Sivaram, Shramana Chakraborty, et al. · Superlattices and Microstructures · 13
RF parameter extraction of Bulk FinFET: A non quasi static approach
2010 · Atanu Kundu, Binit Syamal, et al. · IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) · 12
A linearity based comparison between symmetric and asymmetric lateral diffusion for a 22 nm Underlapped DG-MOSFET
2017 · Ankush Chattopadhyay, Rahul Das, et al. · Superlattices and Microstructures · 8
Memoryless nonlinearity in IT JL FinFET with spacer technology: Investigation towards reliability
2021 · B. Vandana, S.K. Mohapatra, et al. · Microelectronics Reliability · 7
Impact of AlGaN Doping Concentration on the Analog/RF Performance of a Double Gate Underlap n-AlGaN/GaN MOSHEMT
2020 · Rajrup Mitra, Akash Roy, et al. · International Symposium on Devices, Circuits and Systems (ISDCS) · 7
Influence of Device Length on Analog Performances of a Normally-Off Underlapped AlGaN/GaN-based Double Gate MOS-HEMT Device
2024 · Chirayush Chakraborty, Atanu Kundu · International Conference on Recent Trends in Computer Science and Technology (ICRTCST) · 6
Study of Effective Graded Oxide Capacitance and Length Variation on Analog, RF and Power Performances of Dual Gate Underlap MOS-HEMT
2021 · Sneha Ghosh, Anindita Mondal, et al. · Silicon · 6
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Effect of spacer dielectric engineering on Asymmetric Source Underlapped Double Gate MOSFET using Gate Stack
2016 · Ankush Chattopadhyay, Arpan Dasgupta, et al. · Superlattices and Microstructures · 6
Influence on the analog/RF performance in graded channel Gate Stack DG-MOSFETs
2016 · Ankush Chattopadhyay, Arka Dutta, et al. · International Conference on Devices, Circuits and Systems (ICDCS) · 6
A Comparative Study on the Effect of Dielectric Gate Materials on Analog and RF Performance of a Symmetrical Underlap DG Si/SiGe-based MOS-HEMT Device
2024 · Mausiki Kala, Chirayush Chakraborty, et al. · International Conference on Recent Trends in Computer Science and Technology (ICRTCST) · 5
Impact of Source and Drain Underlap on Analog Performance of Double-Gate AlGaN/GaN MOS-HEMT
2020 · Shubham Kumar, Minnat Ali, et al. · IEEE Calcutta Conference (CALCON) · 5
Influence of Symmetric Underlap on Analog, RF and Power Applications for DG AlGaN/GaN MOS-HEMT
2021 · Rajrup Mitra, Akash Roy, et al. · Silicon · 4
Effect of channel engineering on analog/RF performance of underlapped gatestack DG-MOSFET in Sub-20nm regime
2017 · Ankush Chattopadhyay, Rahul Das, et al. · Devices for Integrated Circuit (DevIC) · 4
Works count: 59
Citation count: 455
H-index: 13
I10-index: 14
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