2022 · C. Le Royer, B. Mohamad, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 25

Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact

2017 · Yannick Baines, Julien Buckley, et al. · Scientific Reports · 22

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Characterization of 2DEG in AlGaN/GaN heterostructure by Hall effect

2017 · Iliass Nifa, Charles Leroux, et al. · Microelectronic Engineering · 21

Growth by MOCVD of In(Ga)AlN alloys, and a study of gallium contamination in these layers under nitrogen and hydrogen carrier gas

2016 · R. Bouveyron, M.B. Charles · Journal of Crystal Growth · 19

Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique

2015 · J. Lehmann, C. Leroux, et al. · IEEE International Conference on Microelectronic Test Structures (ICMTS) · 19

Importance of layer distribution in Ni and Au based ohmic contacts to p-type GaN

2023 · Clément Mauduit, Taoufik Slimani Tlemcani, et al. · Microelectronic Engineering · 18

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Effects of negative bias stress on trapping properties of AlGaN/GaN Schottky barrier diodes

2017 · Philippe Ferrandis, Matthew Charles, et al. · Microelectronic Engineering · 18

Ion-assisted gate recess process induced damage in GaN channel of AlGaN/GaN Schottky barrier diodes studied by deep level transient spectroscopy

2017 · Philippe Ferrandis, Matthew Charles, et al. · Japanese Journal of Applied Physics · 18

Characterization of unintentional doping in localized epitaxial GaN layers on Si wafers by scanning spreading resistance microscopy

2023 · Thomas Kaltsounis, Helge Haas, et al. · Microelectronic Engineering · 17

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Breakdown Mechanism of AlGaN/GaN HEMT on 200-mm Silicon Substrate With Silicon Implant-Assisted Contacts

2022 · Antoine Chanuel, Yveline Gobil, et al. · IEEE Transactions on Electron Devices · 17

Study of deep traps in AlGaN/GaN high-electron mobility transistors by electrical characterization and simulation

2019 · Philippe Ferrandis, Mariam El-Khatib, et al. · Journal of Applied Physics · 15

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Multitechnique elemental depth profiling of InAlGaN and InAlN films

2018 · Yann Mazel, Emmanuel Nolot, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 15

On the Understanding of Cathode Related Trapping Effects in GaN-on-Si Schottky Diodes

2018 · Thomas Lorin, G. Ghibaudo, et al. · IEEE Journal of the Electron Devices Society · 15

High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors

2017 · M. Charles, Y. Baines, et al. · Journal of Crystal Growth · 15

From epitaxy to converters topologies what issues for 200 mm GaN/Si?

2015 · L. Di Cioccio, E. Morvan, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 15

Study of Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy

2024 · Mohammed EL AMRANI, Julien Buckley, et al. · Crystals · 13

Works count: 137

Citation count: 2,413

H-index: 17

I10-index: 40