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Author

Min Sun

Observed names: M. Sun, Sun Min, Sun, Min, Sun, Min, Ph. D. Massachusetts Institute of Technology
Observed institutions: Tsinghua Sichuan Energy Internet Research Institute, Sandia National Laboratories, Singapore-MIT Alliance for Research and Technology, SPPIN - Saints-Pères Paris Institute for Neurosciences, Massachusetts Institute of Technology, Tsinghua University
ORCID: 0000-0003-4858-8264
Observed ORCID: 0000-0003-4858-8264
OpenAlex ID: A5101656586
The 2018 GaN power electronics roadmap
2018 · H Amano, Y Baines, et al. · Journal of Physics D Applied Physics · 1,365
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High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates
2017 · Min Sun, Yuhao Zhang, et al. · IEEE Electron Device Letters · 287
GaN-on-Si Vertical Schottky and p-n Diodes
2014 · Yuhao Zhang, Min Sun, et al. · IEEE Electron Device Letters · 195
Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors
2013 · Yuhao Zhang, Min Sun, et al. · IEEE Transactions on Electron Devices · 195
Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
2017 · Yuhao Zhang, Zhihong Liu, et al. · IEEE Electron Device Letters · 187
Materials and processing issues in vertical GaN power electronics
2017 · Jie Hu, Yuhao Zhang, et al. · Materials Science in Semiconductor Processing · 177
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Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes
2015 · Yuhao Zhang, Min Sun, et al. · IEEE Transactions on Electron Devices · 177
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3000-V 4.3-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ InAlN/GaN MOSHEMTs With AlGaN Back Barrier
2012 · Hyung-Seok Lee, Daniel Piedra, et al. · IEEE Electron Device Letters · 157
Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit
2018 · Yuhao Zhang, Min Sun, et al. · IEEE Electron Device Letters · 143
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1200 V GaN vertical fin power field-effect transistors
2017 · Y. Zhang, M. Sun, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 131
Trench formation and corner rounding in vertical GaN power devices
2017 · Yuhao Zhang, Min Sun, et al. · Applied Physics Letters · 119
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Design space and origin of off-state leakage in GaN vertical power diodes
2015 · Y Zhang, H.-Y. Wong, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 115
Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors
2013 · Yuhao Zhang, Min Sun, et al. · Applied Physics Letters · 114
High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn Diodes
2016 · Yuhao Zhang, Daniel Piedra, et al. · IEEE Electron Device Letters · 88
Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings
2016 · Y. Zhang, M. Sun, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 84
A Technology Overview of the PowerChip Development Program
2013 · Mohammad Araghchini, Jun Chen, et al. · IEEE Transactions on Power Electronics · 75
An Etch-Stop Barrier Structure for GaN High-Electron-Mobility Transistors
2013 · Bin Lu, Min Sun, et al. · IEEE Electron Device Letters · 65
Slow Detrapping Transients due to Gate and Drain Bias Stress in High Breakdown Voltage AlGaN/GaN HEMTs
2012 · Sandeepan DasGupta, Min Sun, et al. · IEEE Transactions on Electron Devices · 57
Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes
2017 · Yuhao Zhang, Min Sun, et al. · Applied Physics Letters · 55
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Wafer-Level Heterogeneous Integration of GaN HEMTs and Si (100) MOSFETs
2011 · Hyung-Seok Lee, Kevin Ryu, et al. · IEEE Electron Device Letters · 52
AlGaN/AlN/GaN High-Electron-Mobility Transistors Fabricated with Au-Free Technology
2013 · Zhihong Liu, Min Sun, et al. · Applied Physics Express · 47
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Comparative Breakdown Study of Mesa- and Ion-Implantation-Isolated AlGaN/GaN High-Electron-Mobility Transistors on Si Substrate
2012 · Min Sun, Hyung-Seok Lee, et al. · Applied Physics Express · 47
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Characterization and reliability of SiC- and GaN-based power transistors for renewable energy applications
2012 · R. J. Kaplar, M. J. Marinella, et al. · IEEE Energytech · 38
Instability of Dynamic- $R_{\text ON}$ and Threshold Voltage in GaN-on-GaN Vertical Field-Effect Transistors
2017 · M. Ruzzarin, M. Meneghini, et al. · IEEE Transactions on Electron Devices · 31
Degradation of vertical GaN FETs under gate and drain stress
2018 · M. Ruzzarin, M. Meneghini, et al. · IEEE International Reliability Physics Symposium proceedings · 22
Works count: 54
Citation count: 4,137
H-index: 24
I10-index: 29
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