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Suranjana Banerjee

Observed name: S. Banerjee
ORCID: 0000-0002-1074-7058
Observed ORCID: 0000-0002-1074-7058
OpenAlex ID: A5101659329
Physics of Semiconductors
2019 · Jyoti Prasad Banerjee, Suranjana Banerjee · CRC Press eBooks · 49
Influence of skin effect on the series resistance of millimeter-wave IMPATT devices
2013 · Aritra Acharyya, Suranjana Banerjee, et al. · Journal of Computational Electronics · 41
Effect of junction temperature on the large-signal properties of a 94 GHz silicon based double-drift region impact avalanche transit time device
2013 · Aritra Acharyya, Suranjana Banerjee, et al. · Journal of Semiconductors · 36
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Large-signal characterization of DDR silicon IMPATTs operating up to 0.5 THz
2013 · Aritra Acharyya, Jit Chakraborty, et al. · International Journal of Microwave and Wireless Technologies · 29
A proposed simulation technique to study the series resistance and related millimeter-wave properties of Ka-band Si IMPATTs from the electric field snapshots
2013 · Aritra Acharyya, Suranjana Banerjee, et al. · International Journal of Microwave and Wireless Technologies · 29
Quantum corrected drift-diffusion model for terahertz IMPATTs based on different semiconductors
2014 · Aritra Acharyya, Jayabrata Goswami, et al. · Journal of Computational Electronics · 25
Quantum drift-diffusion model for IMPATT devices
2014 · Aritra Acharyya, Subhashri Chatterjee, et al. · Journal of Computational Electronics · 21
Noise Performance of Heterojunction DDR MITATT Devices Based on at W-Band
2013 · Suranjana Banerjee, Aritra Acharyya, et al. · Active and Passive Electronic Components · 18
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Physics of Semiconductors and Nanostructures
2019 · Jyoti Prasad Banerjee, Suranjana Banerjee · CRC Press eBooks · 14
Heterojunction DDR THz IMPATT diodes based on Al x Ga 1− x N/GaN material system
2015 · Suranjana Banerjee, Monojit Mitra · Journal of Semiconductors · 14
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Potentiality of semiconducting diamond as the base material of millimeter-wave and terahertz IMPATT devices
2014 · Aritra Acharyya, Suranjana Banerjee, et al. · Journal of Semiconductors · 12
Large-Signal Simulation of 94 GHz Pulsed Silicon DDR IMPATTs Including the Temperature Transient Effect
2012 · Aritra Acharyya, Suranjana Banerjee, et al. · Brno University of Technology Digital Library (Brno University of Technology) · 12
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Optical control of large-signal properties of millimeter-wave and sub-millimeter-wave DDR Si IMPATTs
2013 · Aritra Acharyya, Suranjana Banerjee, et al. · Journal of Computational Electronics · 9
Effect of photo-irradiation on the noise properties of double-drift silicon MITATT device
2013 · Aritra Acharyya, Suranjana Banerjee, et al. · International Journal of Electronics · 9
THz Solid-State Source Based on IMPATT Devices
2020 · Suranjana Banerjee · Elsevier eBooks · 8
Large-signal characterization of DDR silicon IMPATTs operating in millimeter-wave and terahertz regime
2013 · Aritra Acharyya, Jit Chakraborty, et al. · Journal of Semiconductors · 7
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Estimation of Most Favorable Optical Window Position Subject to Achieve Finest Optical Control of Lateral DDR IMPATT Diode Designed to Operate at W-Band
2014 · A. Acharyya, J. Goswami, et al. · Brno University of Technology Digital Library (Brno University of Technology) · 6
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Large signal and noise properties of heterojunction AlxGa1−xAs/GaAs DDR IMPATTs
2016 · Suranjana Banerjee, Monojit Mitra · Journal of Semiconductors · 5
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Millimeter-wave and noise properties of Si∼Si1−xGex heterojunction double-drift region MITATT devices at 94 GHz
2012 · Suranjana Banerjee, Aritra Acharyya, et al. · International Conference on Computers and Devices for Communication · 4
Temperature transient effect on the large-signal properties and frequency chirping in pulsed silicon DDR IMPATTs at 94 GHz
2012 · Aritra Acharyya, J. P. Banerjee, et al. · International Conference on Computers and Devices for Communication · 4
Dependence of Noise Properties on Photon Flux Incident on Silicon MITATT Device at Millimeter-Wave Window Frequencies
2012 · Suranjana Banerjee, Aritra Acharyya, et al. · Procedia Technology · 3
Bias Current Modulation of DC and RF Properties of AlmGa1‐m∼GaN Heterojunction IMPATT at Sub‐Millimeter Wave Frequency
2023 · Suranjana Banerjee · Macromolecular Symposia · 2
Low-Dimensional Semiconductors
2019 · Jyoti Prasad Banerjee, Suranjana Banerjee · CRC Press eBooks · 2
94 GHz multiquantum well IMPATT diodes based on 3C-SiC/Si material system
2015 · Suranjana Banerjee, Aritra Acharya, et al. · International Conference on Computer, Communication, Control and Information Technology · 2
A proposed method to study the parasitic resistance of Ka-band Silicon IMPATT diode from large-signal electric field snap-shots
2012 · Aritra Acharyya, J. P. Banerjee, et al. · International Conference on Communications, Devices and Intelligent Systems (CODIS) · 2
Works count: 45
Citation count: 367
H-index: 12
I10-index: 12
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