Get started
Author

Weihao Lu

1200V E-mode GaN Monolithic Integration Platform on Sapphire with Ultra-thin Buffer Technology
2023 · Sheng Li, Yanfeng Ma, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 35
Physics-Based SPICE Modeling of Dynamic on-State Resistance of p-GaN HEMTs
2023 · Sheng Li, Yanfeng Ma, et al. · IEEE Transactions on Power Electronics · 26
Graph based automatic centralized PCI assignment in LTE
2010 · Yanguang Liu, Wenjing Li, et al. · IEEE Symposium on Computers and Communications (ISCC) · 26
Unclamped-Inductive-Switching Behaviors of p-GaN HEMTs at Cryogenic Temperature
2022 · Chi Zhang, Sheng Li, et al. · IEEE Transactions on Power Electronics · 23
Hybrid Gate p-GaN Power HEMTs Technology for Enhanced V th Stability
2022 · Chi Zhang, Sheng Li, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 20
Monolithically Integrated Bidirectional Gate ESD Protection Scheme of p-GaN Power HEMT by Dual-Gate Device Technology
2024 · Yanfeng Ma, Sheng Li, et al. · IEEE Transactions on Power Electronics · 16
Optimal Rate of Kernel Regression in Large Dimensions
2023 · Lu, Weihao, Zhang, Haobo, et al. · arXiv (Cornell University) · 16
PDF
On the Optimality of Misspecified Kernel Ridge Regression
2023 · Zhang, Haobo, Li, Yicheng, et al. · arXiv (Cornell University) · 11
PDF
Aging Reliability Compact Modeling of Trap Effects in Power GaN HEMTs
2024 · Yanfeng Ma, Sheng Li, et al. · IEEE Transactions on Device and Materials Reliability · 9
Optimal Rates of Kernel Ridge Regression under Source Condition in Large Dimensions
2024 · Zhang, Haobo, Li, Yicheng, et al. · arXiv (Cornell University) · 8
PDF
Investigation on the Degradation Mechanism for GaN Cascode Device Under Repetitive Hard-Switching Stress
2021 · Chi Zhang, Siyang Liu, et al. · IEEE Transactions on Power Electronics · 7
Improved Gate ESD Behaviors of p-GaN Power HEMTs by Hybrid Gate Technology
2024 · Yanfeng Ma, Sheng Li, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 6
Numerical study of a novel GaN vertical FinFET with a p-base structure for high switching performance
2022 · Chi Zhang, Bo Hou, et al. · Journal of Computational Electronics · 6
Improving and Modeling Forward Gate ESD Behaviors of p-GaN Power HEMTs by Hybrid Gate Technology
2024 · Yanfeng Ma, Sheng Li, et al. · IEEE Electron Device Letters · 5
The phase diagram of kernel interpolation in large dimensions
2024 · Haobo Zhang, Weihao Lu, et al. · Biometrika · 4
PDF
Comparative Study on High Threshold Voltage and Large Gate Swing Technologies of p-GaN Gate HEMT: Structural Scheme Versus Circuit Scheme
2026 · Yanfeng Ma, Sheng Li, et al. · IEEE Transactions on Power Electronics · 3
Self-Enhanced Unclamped-Inductive-Switching Robustness of High-Voltage p-GaN Gate HEMT on Sapphire Substrate
2025 · Sheng Li, Yanfeng Ma, et al. · IEEE Transactions on Electron Devices · 3
On the Pinsker bound of inner product kernel regression in large dimensions
2024 · Lu, Weihao, Ding, Jialin, et al. · arXiv (Cornell University) · 3
PDF
Exploring Short-Circuit Failure Mechanism of Cascode GaN HEMT
2025 · Sheng Li, Qinhan Wang, et al. · IEEE Transactions on Power Electronics · 2
Impact of Substrate Termination on the Performances of Monolithic ESD Protection Circuit Using Bidirectional GaN HEMTs
2025 · Yanfeng Ma, Sheng Li, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 2
Investigation on the Influences of Affinity Variations of p-NiO x in Ga203 Fin-HJFETs at High Temperatures
2024 · Mingfei Li, Sheng Li, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 2
Superior Performances of Dynamic On-State Resistance in 1.9kV GaN-on-Sapphire HEMT
2023 · Weihao Lu, Sheng Li, et al. · IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) · 2
Threshold Voltage Stability Enhancing Technology for p-GaN HEMTs Using Hybrid Gate Structure
2022 · Chi Zhang, Mingfei Li, et al. · IEEE Electron Device Letters · 2
Investigations on Unclamped-Inductive-Switching Behaviors of p-GaN HEMTs at Cryogenic Temperature
2022 · Chi Zhang, Weihao Lu, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 2
Learning Curves and Benign Overfitting of Spectral Algorithms in Large Dimensions
2026 · Lu, Weihao, Lin, Qian, et al. · arXiv (Cornell University) · 1
PDF
Works count: 34
Citation count: 243
H-index: 9
I10-index: 8
Year
Topic
Type