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Wallace Wan-Li Lin

Observed names: W. Lin, W.W. Lin, Wallace Lin, Wallace W. Lin
ORCID: 0000-0001-7649-3495
Observed ORCID: 0000-0001-7649-3495
OpenAlex ID: A5101799653
A study on the physical mechanism in the recovery of gate capacitance to C/sub ox/ in implanted polysilicon MOS structures
1992 · S.-W. Lee, C. Liang, et al. · IEEE Electron Device Letters · 36
Role of source/drain junction on plasma induced gate charging damage in N MOSFET
2002 · W. Lin, G. Sery · International Symposium on Plasma Process-Induced Damage · 15
A multiple-terminal gate charging model
2003 · W. Lin · IEEE Electron Device Letters · 13
A simple method for extracting average doping concentration in the polysilicon and silicon surface layer near the oxide in polysilicon-gate MOS structures
1994 · W.W. Lin · IEEE Electron Device Letters · 13
On the measurement of parasitic capacitances of device with more than two external terminals using an LCR meter
1991 · W.W. Lin, P.C. Chan · IEEE Transactions on Electron Devices · 13
Multiple-terminal gate charging effect - competing/compensating charging behavior
2003 · W. Lin, G. Sery · IEEE Electron Device Letters · 11
A gate-charging model for ILD related plasma processes in MOSFETs
2003 · W. Lin, G. Sery · IEEE Electron Device Letters · 11
New experimental method for extracting the density and generation annealing rates of interface and oxide traps
1986 · Chih-Tang Sah, Wallace Wan-Li Lin, et al. · Applied Physics Letters · 11
Bond-Pad Charging Protection Design for Charging-Free Reference Transistor Test Structures
2015 · Wallace Lin · IEEE Transactions on Electron Devices · 9
New method for separating and characterizing interface states and oxide traps on oxidized silicon
1986 · Chih-Tang Sah, Wallace Wan-Li Lin, et al. · Applied Physics Letters · 9
A New Technique for Measuring Gate-Oxide Leakage in Charging Protected MOSFETs
2007 · Wallace Lin · IEEE Transactions on Electron Devices · 7
Analytical Modelling of Ferroelectricity Instigated Enhanced Electrostatic Control in Short-Channel FinFETs
2021 · Jhang-Yan Ciou, Sourav De, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM) · 6
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Photonic integrated circuits based on silica and polymer PLC
2013 · T. Izuhara, J. Fujita, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 5
Optical network control overlay using silicon VOA arrays
2005 · T.E. Darcie, P.F. Driessen, et al. · IEEE Photonics Technology Letters · 5
A model for n-well junction effect on gate-charging damage in PMOSFETs
2002 · W. Lin, G. Sery · IEEE Electron Device Letters · 5
Fix to negative output conductance problem in BSIM2 model (MOSFET)
1993 · W.W. Lin, P.C. Chan · IEEE Transactions on Electron Devices · 4
Generation and annealing of interface traps on oxidized silicon irradiated by keV electrons
1988 · Wallace Wan-Li Lin, Chih-Tang Sah · Solid-State Electronics · 4
Plasma Charging Behavior of p-MOSFETs With Floating Bond Pads and Its Application to Charging-Safe Bond Pad Design
2016 · Wallace Lin · IEEE Transactions on Electron Devices · 3
A New Gate-Charging Protection Strategy for Transistors in Integrated-Circuit Test Chips and Products
2007 · Wallace Lin, Jan Smudski · IEEE Transactions on Electron Devices · 3
Polysilicon gate depletion effect on deep-submicron circuit performance
2002 · W.W. Lin, Chunlin Liang · Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD) · 2
Separation of d.c. and a.c. competing effect of polysilicon-gate depletion in deep submicron CMOS circuit performance
1996 · Wallace W. Lin, Chunlin Liang · Solid-State Electronics · 2
Physical-Model Guided Design on Transistor Test Structures for Extracting Metal Charging Design Rules
2017 · Wallace Lin · IEEE Transactions on Electron Devices · 1
Interaction between ILD-process and metal-etch induced gate charging effect
2003 · W. Lin, G. Sery · International Symposium on Plasma Process-Induced Damage · 1
Hydrogenation kinetics in oxidized boron-doped silicon irradiated by keV electrons
1988 · Wallace Wan-Li Lin, Chih-Tang Sah · Journal of Applied Physics · 1
Direct Extraction of Fowler–Nordheim Tunneling Parameters of Asymmetric Metal-Insulator-Metal Diodes Based on Current-Voltage Measurement
2025 · Wallace Lin, Darsen D. Lu · IEEE Journal of the Electron Devices Society
Works count: 31
Citation count: 190
H-index: 9
I10-index: 8
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