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Zilan Li

Comprehensive understanding of the roles of water molecules in aqueous Zn-ion batteries: from electrolytes to electrode materials
2021 · Ming Li, Zilan Li, et al. · Energy & Environmental Science · 562
The Marriage of the FeN4 Moiety and MXene Boosts Oxygen Reduction Catalysis: Fe 3d Electron Delocalization Matters
2018 · Zilan Li, Zechao Zhuang, et al. · Advanced Materials · 458
MoB/g‐C3N4 Interface Materials as a Schottky Catalyst to Boost Hydrogen Evolution
2017 · Zechao Zhuang, Yong Li, et al. · Angewandte Chemie International Edition · 410
A Novel Dendrite‐Free Mn2+/Zn2+ Hybrid Battery with 2.3 V Voltage Window and 11000‐Cycle Lifespan
2019 · Ming Li, Qiu He, et al. · Advanced Energy Materials · 241
Stabilizing Fe–N–C Catalysts as Model for Oxygen Reduction Reaction
2021 · Qianli Ma, Huihui Jin, et al. · Advanced Science · 228
Ru‐Incorporated Nickel Diselenide Nanosheet Arrays with Accelerated Adsorption Kinetics toward Overall Water Splitting
2021 · Rui Qin, Pengyan Wang, et al. · Small · 118
MoB/g‐C 3 N 4 Interface Materials as a Schottky Catalyst to Boost Hydrogen Evolution
2017 · Zechao Zhuang, Yong Li, et al. · Angewandte Chemie · 98
Ultralow Ru-assisted and vanadium-doped flower-like CoP/Ni 2 P heterostructure for efficient water splitting in alkali and seawater
2021 · Qianli Ma, Huihui Jin, et al. · Journal of Materials Chemistry A · 84
Sisyphus effects in hydrogen electrochemistry on metal silicides enabled by silicene subunit edge
2019 · Zechao Zhuang, Yong Li, et al. · 中国科学通报：英文版 · 79
1700 V High-Performance GaN HEMTs on 6-inch Sapphire With 1.5 μm Thin Buffer
2023 · Xiangdong Li, Junbo Wang, et al. · IEEE Electron Device Letters · 55
Dual active site-mediated Ir single-atom-doped RuO 2 catalysts for highly efficient and stable water splitting
2024 · Zhenhua Tao, Ning Lv, et al. · Chemical Science · 52
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Direct lift-off and the piezo-phototronic study of InGaN/GaN heterostructure membrane
2019 · Jian Jiang, Qiao Wang, et al. · Nano Energy · 39
Demonstration of >8-kV GaN HEMTs With CMOS-Compatible Manufacturing on 6-in Sapphire Substrates for Medium-Voltage Applications
2024 · Xiangdong Li, Jie Zhang, et al. · IEEE Transactions on Electron Devices · 38
p-GaN Gate HEMTs on 6-Inch Sapphire by CMOS-Compatible Process: A Promising Game Changer for Power Electronics
2024 · Zhanfei Han, Xiangdong Li, et al. · IEEE Electron Device Letters · 36
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Inhibiting Mn Migration by Sb‐Pinning Transition Metal Layers in Lithium‐Rich Cathode Material for Stable High‐Capacity Properties
2022 · Fei Cao, Weihao Zeng, et al. · Small · 36
(Invited) Intrinsic Reliability Assessment of 650V Rated AlGaN/GaN Based Power Devices: An Industry Perspective
2016 · Peter Moens, Abhishek Banerjee, et al. · ECS Transactions · 27
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Oxygen incorporation in TiN for metal gate work function tuning with a replacement gate integration approach
2009 · Zilan Li, Tom Schram, et al. · Microelectronic Engineering · 22
Report of GaN HEMTs on 8-in Sapphire
2024 · Junbo Wang, Xiangdong Li, et al. · IEEE Transactions on Electron Devices · 21
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Coupling CoIr Nanoalloys with MXene by Lewis Acidic Molten Salt Etching for Wide‐pH‐Environment Hydrogen Evolution Reaction
2024 · Qingqu Zhou, Hongyu Zhao, et al. · Small Methods · 17
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Effect of V/III ratio on the surface morphologies of N-polar GaN films grown on offcut sapphire substrates
2020 · Chengguo Li, Kang Zhang, et al. · Journal of Crystal Growth · 17
Investigation on Molybdenum and Its Conductive Oxides as p-Type Metal Gate Candidates
2008 · Zilan Li, Tom Schram, et al. · Journal of The Electrochemical Society · 17
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Achieving ≥ 1200-V High-Performance GaN HEMTs on Sapphire With Carbon-Doped Buffer
2024 · Zhibo Cheng, Xiangdong Li, et al. · IEEE Transactions on Electron Devices · 15
Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition
2003 · Lu Min, Chang Xin, et al. · Chinese Physics Letters · 14
Suppressing the Leakage of GaN HEMTs on Single-Crystalline AlN Templates by Buffer Optimization
2024 · Junbo Wang, Xiangdong Li, et al. · IEEE Transactions on Electron Devices · 11
Energy band-alignment of a multimetal-layer gated metal-oxide-semiconductor structure
2009 · Zilan Li, Michel Houssa, et al. · Applied Physics Letters · 8
Works count: 47
Citation count: 2,744
H-index: 18
I10-index: 24
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