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Author

Sungju Choi

Observed names: S. -J. Choi, S. Choi, S. J. Choi
Institution: Kookmin University
ORCID: 0000-0002-3968-066X
Observed ORCID: 0000-0002-3968-066X
OpenAlex ID: A5102898773
ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors
2019 · Lynn Lee, Jeongwoon Hwang, et al. · Nature Communications · 117
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Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors
2019 · Sungju Choi, Jae-Young Kim, et al. · Materials · 72
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Total Subgap Range Density of States-Based Analysis of the Effect of Oxygen Flow Rate on the Bias Stress Instabilities in a-IGZO TFTs
2021 · Ga Won Yang, Jingyu Park, et al. · IEEE Transactions on Electron Devices · 63
Systematic Decomposition of the Positive Bias Stress Instability in Self-Aligned Coplanar InGaZnO Thin-Film Transistors
2017 · Sungju Choi, Juntae Jang, et al. · IEEE Electron Device Letters · 58
Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors
2022 · Sungju Choi, Jingyu Park, et al. · Advanced Electronic Materials · 49
Experimental decomposition of the positive bias temperature stress‐induced instability in self‐aligned coplanar InGaZnO thin‐film transistors and its modeling based on the multiple stretched‐exponential functions
2017 · Dae Hwan Kim, Sungju Choi, et al. · Journal of the Society for Information Display · 34
Effects of structure and oxygen flow rate on the photo-response of amorphous IGZO-based photodetector devices
2017 · Jun Tae Jang, Daehyun Ko, et al. · Solid-State Electronics · 32
Ultrasensitive Electrical Detection of Hemagglutinin for Point-of-Care Detection of Influenza Virus Based on a CMP-NANA Probe and Top-Down Processed Silicon Nanowire Field-Effect Transistors
2019 · Mihee Uhm, Jin-Moo Lee, et al. · Sensors · 30
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Positive Bias Stress Instability of InGaZnO TFTs With Self-Aligned Top-Gate Structure in the Threshold-Voltage Compensated Pixel
2019 · Sungju Choi, Sung-Jin Choi, et al. · IEEE Electron Device Letters · 26
The Effect of Gate and Drain Fields on the Competition Between Donor-Like State Creation and Local Electron Trapping in In–Ga–Zn–O Thin Film Transistors Under Current Stress
2015 · Sungju Choi, Hyeongjung Kim, et al. · IEEE Electron Device Letters · 25
Complementary Hybrid Semiconducting Superlattices with Multiple Channels and Mutual Stabilization
2020 · Jongchan Kim, Chu Thi Thu Huong, et al. · Nano Letters · 24
The electron trap parameter extraction-based investigation of the relationship between charge trapping and activation energy in IGZO TFTs under positive bias temperature stress
2017 · Jihyun Rhee, Sungju Choi, et al. · Solid-State Electronics · 24
CML-type MOnostable BIstable logic element (MOBILE) using InP-based monolithic RTD/HBT technology
2004 · S. Choi, B. Lee, et al. · Electronics Letters · 23
Effect of Simultaneous Mechanical and Electrical Stress on the Electrical Performance of Flexible In-Ga-Zn-O Thin-Film Transistors
2019 · Youngjin Seo, Hwan-Seok Jeong, et al. · Materials · 22
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Method to Extract Interface and Bulk Trap Separately Over the Full Sub-Gap Range in Amorphous InGaZnO Thin-Film Transistors by Using Various Channel Thicknesses
2019 · Sungju Choi, Jae-Young Kim, et al. · IEEE Electron Device Letters · 22
Modeling and Characterization of the Abnormal Hump in n-Channel Amorphous-InGaZnO Thin-Film Transistors After High Positive Bias Stress
2015 · Jungmin Lee, Sungju Choi, et al. · IEEE Electron Device Letters · 16
Experimental extraction of stern-layer capacitance in biosensor detection using silicon nanowire field-effect transistors
2020 · Sungju Choi, Hyun-Sun Mo, et al. · Current Applied Physics · 14
Implementing an artificial synapse and neuron using a Si nanowire ion-sensitive field-effect transistor and indium-gallium-zinc-oxide memristors
2019 · Sungju Choi, Seohyeon Kim, et al. · Sensors and Actuators B Chemical · 14
Influence of the Gate/Drain Voltage Configuration on the Current Stress Instability in Amorphous Indium-Zinc-Oxide Thin-Film Transistors With Self-Aligned Top-Gate Structure
2019 · Sungju Choi, Shinyoung Park, et al. · IEEE Electron Device Letters · 12
A Study on the Degradation of In-Ga–Zn-O Thin-Film Transistors Under Current Stress by Local Variations in Density of States and Trapped Charge Distribution
2015 · Sungju Choi, Hyeongjung Kim, et al. · IEEE Electron Device Letters · 12
Current Boosting of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors under Driving Conditions
2023 · Jingyu Park, Sungju Choi, et al. · Advanced Electronic Materials · 10
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Oxygen Content and Bias Influence on Amorphous InGaZnO TFT-Based Temperature Sensor Performance
2019 · Sungju Choi, Seohyeon Kim, et al. · IEEE Electron Device Letters · 10
Universal model of bias-stress-induced instability in inkjet-printed carbon nanotube networks field-effect transistors
2017 · Haesun Jung, Sungju Choi, et al. · Solid-State Electronics · 10
Comprehensive separate extraction of parasitic resistances in MOSFETs considering the gate bias-dependence and the asymmetric overlap length
2018 · Junyeap Kim, Hanbin Yoo, et al. · Microelectronics Reliability · 9
Physics-Based Compact Model of Current Stress-Induced Threshold Voltage Shift in Top-Gate Self-Aligned Amorphous InGaZnO Thin-Film Transistors
2022 · Tae Jun Yang, Jingyu Park, et al. · IEEE Electron Device Letters · 8
Works count: 57
Citation count: 823
H-index: 16
I10-index: 23
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