Author

Andrew R. Brown

Observed names: A R Brown, A. Brown, A. R. Brown, A.R. Brown

Observed institutions: Synopsys (United States), University of Glasgow, University of California, Berkeley

ORCID: 0000-0003-4471-7129

Observed ORCID: 0000-0003-4471-7129

OpenAlex ID: A5102906680

2007 · Andrew R. Brown, Gareth Roy, et al. · IEEE Transactions on Electron Devices · 142

Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study

2009 · Natalia Seoane, Antonio Martinez, et al. · IEEE Transactions on Electron Devices · 76

Evaluation of statistical variability in 32 and 22nm technology generation LSTP MOSFETs

2009 · B. Cheng, S. Roy, et al. · Solid-State Electronics · 23

Simulation of “Ab Initio” Quantum Confinement Scattering in UTB MOSFETs Using Three-Dimensional Ensemble Monte Carlo

2010 · Craig Riddet, Craig Alexander, et al. · IEEE Transactions on Electron Devices · 21

Potential fluctuations in metal–oxide–semiconductor field-effect transistors generated by random impurities in the depletion layer

2002 · G. Slavcheva, J. H. Davies, et al. · Journal of Applied Physics · 19

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Impact of STI on Statistical Variability and Reliability of Decananometer MOSFETs

2011 · Xingsheng Wang, Scott Roy, et al. · IEEE Electron Device Letters · 17

2010 · B Cheng, A R Brown, et al. · IEEE Electron Device Letters · 17

Design Technology Co-Optimization for the DRAM Cell Structure With Contact Resistance Variation

2024 · Jaehyun Lee, Plamen Asenov, et al. · IEEE Transactions on Electron Devices · 15

Can the Density Gradient Approach Describe the Source-Drain Tunnelling in Decanano Double-Gate MOSFETs?

2002 · J.R. Watling, A.R. Brown, et al. · Journal of Computational Electronics · 15

Intrinsic parameter fluctuations in conventional MOSFETs until the end of the ITRS: A statistical simulation study

2006 · G Roy, F Adamu-Lema, et al. · Journal of Physics Conference Series · 13

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Scalable parallel 3D finite element nonlinear poisson solver

1996 · A. Asenov, J.R. Barker, et al. · Simulation Practice and Theory · 9

Grid infrastructures for the electronics domain: requirements and early prototypes from an EPSRC pilot project

2007 · Richard Sinnott, Asen Asenov, et al. · ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam) · 8

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UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation

2005 · K. Samsudin, B. Cheng, et al. · European Solid-State Device Research Conference · 8

Statistical TCAD based PDK development for a FinFET technology at 14nm technology node

2012 · B. Cheng, Xingsheng Wang, et al. · ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam) · 7

NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants

2011 · A. Martinez, A. R. Brown, et al. · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon · 7

Quantum Corrections in 3-D Drift Diffusion Simulations of Decanano MOSFETs Using an Effective Potential

2001 · J. R. Watling, A. R. Brown, et al. · Springer eBooks · 6

Discrete-Trap Effects on 3-D NAND Variability – Part I: Threshold Voltage

2024 · Gerardo Malavena, Salvatore M. Amoroso, et al. · IEEE Journal of the Electron Devices Society · 4

Discrete-Trap Effects on 3-D NAND Variability – Part II: Random Telegraph Noise

2024 · Gerardo Malavena, Salvatore M. Amoroso, et al. · IEEE Journal of the Electron Devices Society · 4

Simulation Study of Workfunction Variability in MOSFETs with Polycrystalline Metal Gates

2010 · Niza Mohd Idris, Andrew R. Brown, et al. · 4

The Use of Quantum Potentials for Confinement in Semiconductor Devices

2002 · Asen Asenov, Andrew R. Brown, et al. · 4

Topologically Rectangular Grids in the Parallel Simulationof Semiconductor Devices

1998 · A. Asenov, A. R. Brown, et al. · VLSI design · 4

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A Multiscale Simulation Approach for Program Noise and Cross-temperature Effects in 3D NANDs

2024 · Keng-Hua Lin, Salvatore Maria Amoroso, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 1

Statistical variations in 32nm thin-body SOI devices and SRAM cells

2008 · B. Cheng, S. Roy, et al. · IEEE International Conference on Solid-State and Integrated Circuit Technology · 1

Monte Carlo Study of Coupled SO Scattering in Si MOSFETs with High κ- Dielectric Gate Stacks: Hot Electron and Disorder Effects

2007 · J. R. Barker, J. R. Watling, et al. · Springer eBooks · 1

Atomistic Simulation of Decanano MOSFETs

2004 · A. Asenov, A. R. Brown, et al. · Springer series in materials science · 1

Works count: 28

Citation count: 428

H-index: 10

I10-index: 10