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Yan-Xiang Luo
Observed names:
Y. L. Luo,
Y.L Luo,
Y.L. Luo,
Yanxiang Luo
Institution:
Ningbo University
Observed institutions:
Ningbo University,
University of Kansas,
National Chi Nan University,
National Tsing Hua University,
Shantou University,
The University of Kansas Cancer Center,
University of Kansas Medical Center,
University of Hong Kong,
Yuan Ze University
show all 9
ORCID:
0000-0002-6425-5104
Observed ORCID:
0000-0002-6425-5104
OpenAlex ID:
A5102935568
The electrochemistry of antineoplastic furanquinones: Electrochemical properties of benzo[b]naphtho[2,3-d]furan-6,11-dione derivatives
1996
·
P.W. Crawford
, E. Carlos
, et al.
·
Electrochimica Acta
·
41
Micron-sized Na0.7MnO2.05 as cathode materials for aqueous rechargeable magnesium-ion batteries
2019
·
Tianjiao Sun
, Xiaolin Yao
, et al.
·
Ionics
·
31
Schottky Barrier Silicon Nanowire SONOS Memory With Ultralow Programming and Erasing Voltages
2011
·
Chun-Hsing Shih
, Wei Chang
, et al.
·
IEEE Electron Device Letters
·
19
Source-side injection Schottky barrier flash memory cells
2009
·
Chun-Hsing Shih
, Sheng-Pin Yeh
, et al.
·
Semiconductor Science and Technology
·
14
PDF
Reverse I–V characteristics of Au/semi-insulating GaAs(1 0 0)
1997
·
Y.L. Luo
, T.P. Chen
, et al.
·
Solid State Communications
·
14
Coupling of carriers injection and charges distribution in Schottky barrier charge-trapping memories using source-side electrons programming
2014
·
Yan-Xiang Luo
, Chun-Hsing Shih
·
Semiconductor Science and Technology
·
13
PDF
DX -like properties of the EL6 defect family in GaAs
1998
·
C. V. Reddy
, Y. L. Luo
, et al.
·
Physical review. B, Condensed matter
·
12
Reading Operation and Cell Scalability of Nonvolatile Schottky barrier Multibit Charge-Trapping Memory Cells
2012
·
Chun-Hsing Shih
, Ji-Ting Liang
, et al.
·
IEEE Transactions on Electron Devices
·
9
A Localized Two-Bit/Cell Nanowire SONOS Memory Using Schottky Barrier Source-Side Injected Programming
2013
·
Wei Chang
, Chun-Hsing Shih
, et al.
·
IEEE Transactions on Nanotechnology
·
6
The preparation, characterization, electro-chemical performance and transporting mechanism of Na1.25Cr0.25Ti1.75(PO4)3/C as anode material for SIBs
2020
·
Qinyun Wang
, Yanxiang Luo
, et al.
·
Solid State Ionics
·
5
Drain-induced Schottky barrier source-side hot carriers and its application to program local bits of nanowire charge-trapping memories
2014
·
Wei Chang
, Chun-Hsing Shih
, et al.
·
Japanese Journal of Applied Physics
·
4
PDF
Effects of Dopant-Segregated Profiles on Schottky Barrier Charge-Trapping Flash Memories
2014
·
Chun-Hsing Shih
, Yan-Xiang Luo
·
IEEE Transactions on Electron Devices
·
4
Impact of Edge Encroachment on Programming and Erasing Gate Current in nand -Type Flash Memory
2011
·
Ji-Ting Liang
, Chun-Hsing Shih
, et al.
·
IEEE Transactions on Electron Devices
·
3
Design Considerations of Nanoscale Schottky Barrier Flash Memory with Source-Side Injection Programming
2011
·
Chun-Hsing Shih
, Yan-Xiang Luo
, et al.
·
Japanese Journal of Applied Physics
·
3
PDF
A search for defect configurational changes in the post‐breakdown metastability of semi‐insulating GaAs
2004
·
Y. L. Luo
, S. Fung
, et al.
·
physica status solidi (b)
·
3
PDF
Reliability impacts of high-speed 3-bit/cell Schottky barrier nanowire charge-trapping memories
2014
·
Wei Chang
, Chun-Hsing Shih
, et al.
·
Microelectronics Reliability
·
2
Carrier injection level dependence of post-breakdown metastability in semi-insulating GaAs
2003
·
Y.L. Luo
, Y.W. Zhao
, et al.
·
Solid State Communications
·
2
Two post-breakdown metastable phases in semi-insulating GaAs
2002
·
Y.L Luo
, S Fung
, et al.
·
Solid State Communications
·
2
Electrically induced room temperature metastability in semi-insulating GaAs
1998
·
S. Fung
, Y.L. Luo
, et al.
·
Solid State Communications
·
2
Fermi level position at metal/semi-insulating-GaAs (1 0 0) interfaces studied by photoelectric techniques
1997
·
T.P. Chen
, Y.L. Luo
, et al.
·
Solid State Communications
·
2
Short-drain effect of 5 nm tunnel field-effect transistors
2015
·
Yu-Hsuan Chen
, Nguyễn Đăng Chiến
, et al.
·
IEEE Silicon Nanoelectronics Workshop
·
1
Sub-10V 4-bit/cell Schottky barrier nanowire nonvolatile memory
2012
·
Wei Chang
, Chun-Hsing Shih
, et al.
·
IEEE International Conference on Nanotechnology (IEEE-NANO)
·
1
Influence of trapped charges on low-level leakage current in thin silicon dioxide films
2005
·
T.P. Chen
, Y.L. Luo
·
IEEE International Conference on Solid-State and Integrated Circuit Technology
·
1
Iterative programming analysis of dopant-segregated multibit/cell Schottky barrier charge-trapping memories
2015
·
Yu-Hsuan Chen
, Jr-Jie Tsai
, et al.
·
Non-Volatile Memory Technology Symposium
Drain-controlled ambipolar conduction and hot-hole injection in Schottky barrier charge-trapping memory cells
2015
·
Yu-Hsuan Chen
, Yan-Xiang Luo
, et al.
·
International Workshop on Junction Technology
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Works count:
28
Citation count:
194
H-index:
8
I10-index:
7
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