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Hyunchul Jang

Observed names: H. Jang, H. K. Jang, H.-K. Jang, H.K. Jang, Hyun-Chul Jang, 장현철
ORCID: 0000-0002-4349-5272
Observed ORCID: 0000-0002-4349-5272
OpenAlex ID: A5103271564
Effects of thermally induced anatase-to-rutile phase transition in MOCVD-grown TiO2 films on structural and optical properties
2001 · D.-J. Won, C.-H. Wang, et al. · Applied Physics A · 198
Growth of Few‐Layer Graphene on a Thin Cobalt Film on a Si/SiO2 Substrate
2011 · Eunho Kim, Hyosub An, et al. · Chemical Vapor Deposition · 42
Effects of chemical etching with nitric acid on glass surfaces
2001 · H. K. Jang, Y. D. Chung, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 38
Titanium oxide films on Si(100) deposited by electron-beam evaporation at 250 °C
2000 · H. K. Jang, S. W. Whangbo, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 38
Effects of chemical etching with sulfuric acid on glass surface
2000 · H. K. Jang, Y. D. Chung, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 28
Effects of chemical etching with hydrochloric acid on a glass surface
2000 · H. K. Jang, Y. D. Chung, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 25
Titanium oxide films on Si(100) deposited by e-beam evaporation
2000 · H. K. Jang, S. W. Whangbo, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 23
Selective chemical wet etching of Si1-xGex versus Si in single-layer and multi-layer with HNO3/HF mixtures
2020 · Yongjoon Choi, Hyunchul Jang, et al. · Thin Solid Films · 16
Strain evolution during the growth of epitaxial Ge layers between narrow oxide trenches
2014 · Byongju Kim, Sun-Wook Kim, et al. · Journal of Crystal Growth · 15
Selective epitaxial growth of stepwise SiGe:B at the recessed sources and drains: A growth kinetics and strain distribution study
2016 · Sangmo Koo, Hyunchul Jang, et al. · AIP Advances · 11
Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction
2014 · Sun-Wook Kim, Dae-Seop Byeon, et al. · Applied Physics Letters · 11
High performance InGaAs channel MOSFETs on highly resistive InAlAs buffer layers
2020 · Sang Tae Lee, In-Geun Lee, et al. · Solid-State Electronics · 10
Selective epitaxial growth of compressively strained Ge layers on Si in 40-nm trench arrays
2013 · Byongju Kim, Sun-Wook Kim, et al. · Thin Solid Films · 9
Fabrication and Characterization of In0.53Ga0.47As/InAs/In0.53Ga0.47As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate
2022 · Seung Heon Shin, Jae-Phil Shim, et al. · Micromachines · 8
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Facet evolution of selectively grown epitaxial Si1−Ge fin layers in sub-100 nm trench arrays
2019 · Hyunchul Jang, Sangmo Koo, et al. · Journal of Crystal Growth · 8
Characterization of strain relaxation behavior in Si1−xGex epitaxial layers by dry oxidation
2017 · Hyunchul Jang, Byongju Kim, et al. · Journal of the Korean Physical Society · 7
Epitaxial growth of Al2O3 thin films on Si(100) using ionized beam deposition
2001 · S. W. Whangbo, Y. K. Choi, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 7
The Variation of Schottky Barrier Height Induced by the Phase Separation of InAlAs Layers on InP HEMT Devices
2022 · Sang-Tae Lee, Minwoo Kong, et al. · Crystals · 5
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Selective epitaxial growth properties and strain characterization of Si1−x Ge x in SiO2 trench arrays
2017 · Sangmo Koo, Hyunchul Jang, et al. · Journal of the Korean Physical Society · 5
Effect of in-situ Zn doping on suppression of phase separation in In Al1−As epitaxial layer on InP(001) grown by MOCVD
2023 · Hyunchul Jang, Sang Tae Lee, et al. · Journal of Alloys and Compounds · 4
Vertical growth characterization of InAs nanowires grown by selective area growth on patterned InP(1 1 1)B substrate by a MOCVD method
2020 · Chang-Hun Song, Minwoo Kong, et al. · Solid-State Electronics · 4
Effects of high-dose gamma-ray irradiation on an In0.53Ga0.47As high electron mobility transistor
2024 · Jae-Phil Shim, Dong-Seok Kim, et al. · Japanese Journal of Applied Physics · 3
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Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs
2023 · Ki-Yong Shin, Ju-Won Shin, et al. · Materials · 3
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Morphology Transition of Te-Doped InAs Nanowire on InP(111)B Grown Using MOCVD Method
2022 · Chang-Hun Song, Minwoo Kong, et al. · Crystals · 3
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Thermally induced metastability of InGaAs single-layer for highly strained superlattices by metal-organic chemical vapor deposition
2022 · Sooseok Kang, Jongmin Kim, et al. · Journal of Alloys and Compounds · 3
Works count: 51
Citation count: 551
H-index: 11
I10-index: 12
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