Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction
Year: 2014
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.4893926
Authors: Sun-Wook Kim, Dae-Seop Byeon, Hyunchul Jang, Sang-Mo Koo, Hoo-Jeong Lee, Dae-Hong Ko
Institutions: Yonsei University, Sungkyunkwan University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2016472492