Author

Sun-Wook Kim

OpenAlex ID: A5110033070

Understanding the Epitaxial Growth of Se x Te y @Te Core−Shell Nanorods and the Generation of Periodic Defects

2010 · Geon Dae Moon, Yuho Min, et al. · ACS Nano · 16

Strain evolution during the growth of epitaxial Ge layers between narrow oxide trenches

2014 · Byongju Kim, Sun-Wook Kim, et al. · Journal of Crystal Growth · 15

Selective epitaxial growth of stepwise SiGe:B at the recessed sources and drains: A growth kinetics and strain distribution study

2016 · Sangmo Koo, Hyunchul Jang, et al. · AIP Advances · 11

Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction

2014 · Sun-Wook Kim, Dae-Seop Byeon, et al. · Applied Physics Letters · 11

Selective epitaxial growth of compressively strained Ge layers on Si in 40-nm trench arrays

2013 · Byongju Kim, Sun-Wook Kim, et al. · Thin Solid Films · 9

Relaxation of misfit strain in silicon-germanium (Si1−xGex) films during dry oxidation

2010 · Jung-Ho Yoo, Sun-Wook Kim, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 9

Two-Step Growth of Epitaxial InP Layers by Metal Organic Chemical Vapor Deposition

2016 · Young-Dae Cho, In-Geun Lee, et al. · Journal of Nanoscience and Nanotechnology · 5

Change in crystalline structure and band alignment in atomic-layer-deposited HfO2 on InP using an annealing treatment

2013 · Yu-Seon Kang, Dae-Kyoung Kim, et al. · physica status solidi (a) · 4

Effect of thermal annealing on the strain and microstructures of in-situ phosphorus-doped Si1−xCx films grown on blanket and patterned silicon wafers

2019 · Sun-Wook Kim, Minhyeong Lee, et al. · Journal of Alloys and Compounds · 3

In-Situ P Doped Epitaxial Si1−xCx Growth Under UHV-CVD

2014 · Sangmo Koo, Jung-Ho Yoo, et al. · Journal of Nanoscience and Nanotechnology · 3

Oxidation characteristics of Si0.85Ge0.15 nanowires

2008 · Sang-Yeon Kim, Sun-Wook Kim, et al. · Materials Science in Semiconductor Processing · 3

Process to Form V-Grooved Trenches on Patterned Si (001) Substrates Using In Situ Selective Area Etching in a MOCVD Reactor

2016 · Young-Dae Cho, In-Geun Lee, et al. · ECS Journal of Solid State Science and Technology · 2

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Growth and electrical properties of in situ phosphorus-doped polycrystalline silicon films using Si3H8 and PH3

2014 · Byongju Kim, Hyunchul Jang, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2

Electrical Activation of Phosphorus in Highly P-Doped Epitaxial Silicon Thin Films

2017 · Minhyeong Lee, Sun-Wook Kim, et al. · Journal of Nanoscience and Nanotechnology · 1

The Oxides Growth During High-Temperature Oxidation of Si1−xGex Nanowires

2012 · Sun-Wook Kim, Sang-Yeon Kim, et al. · Journal of Nanoscience and Nanotechnology

Ge Oxidation in the Remaining Cores of Si1–xGex Nanowires After Prolonged Oxidation

2012 · Sang-Yeon Kim, Sun-Wook Kim, et al. · Journal of Nanoscience and Nanotechnology

Reply to “Comment on 'Understanding the Epitaxial Growth of SexTey@Te Core–Shell Nanorods and the Generation of Periodic Defects'”

2011 · Geon Dae Moon, Yuho Min, et al. · ACS Nano

Investigation of Process Parameters on the Properties of Selective Epitaxial Growth SiGe Structure

2010 · Sun-Wook Kim, J.-H. Yoo, et al. · ECS Transactions

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Works count: 18

Citation count: 94

H-index: 6

I10-index: 4