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You-Liang Chou

Observed names: Y. L. Chou, Y.L. Chou
ORCID: 0000-0001-6705-0852
Observed ORCID: 0000-0001-6705-0852
OpenAlex ID: A5103285123
Polycrystalline-silicon channel trap induced transient read instability in a 3D NAND flash cell string
2016 · Wen-Jer Tsai, W. L. Lin, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 37
Poly-Silicon Trap Position and Pass Voltage Effects on RTN Amplitude in a Vertical NAND Flash Cell String
2016 · Y. L. Chou, Tahui Wang, et al. · IEEE Electron Device Letters · 27
A Novel Random Telegraph Signal Method to Study Program/Erase Charge Lateral Spread and Retention Loss in a SONOS Flash Memory
2011 · Huan-Chi Ma, You-Liang Chou, et al. · IEEE Transactions on Electron Devices · 19
$V_{t}$ Retention Distribution Tail in a Multitime-Program MLC SONOS Memory Due to a Random-Program-Charge-Induced Current-Path Percolation Effect
2012 · Yueh-Ting Chung, Tzu-I Huang, et al. · IEEE Transactions on Electron Devices · 7
Program Trapped-Charge Effect on Random Telegraph-Noise Amplitude in a Planar SONOS Flash Memory Cell
2009 · H.C. Ma, Y.L. Chou, et al. · IEEE Electron Device Letters · 6
Investigation of Vth Distribution Tails of Ground-Select-Line Cells and Edge Dummy Cells in a 3-D NAND Flash Memory
2021 · You-Liang Chou, Tahui Wang, et al. · IEEE Transactions on Electron Devices · 5
A Novel BTBT Erase-Based PUF Generation Method With High Throughput in a 3-D NAND Flash Memory
2025 · You-Liang Chou, C. C. Cheng, et al. · IEEE Transactions on Electron Devices · 4
Program charge effect on random telegraph noise amplitude and its device structural dependence in SONOS flash memory
2009 · J.P. Chiu, Y.L. Chou, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 3
Variations of $V_{t}$ Retention Loss in a SONOS Flash Memory Due to a Current-Path Percolation Effect
2011 · Y. L. Chou, Y. T. Chung, et al. · IEEE Electron Device Letters · 2
Use of random telegraph signal as internal probe to study program/erase charge lateral spread in a SONOS flash memory
2010 · Y.L. Chou, J.P. Chiu, et al. · IEEE International Reliability Physics Symposium proceedings · 2
A Robust Read-Based PUF Generation Method in a 3-D NAND Flash Memory
2026 · You-Liang Chou, Wen-Jer Tsai, et al. · IEEE Transactions on Electron Devices · 1
Target Reprogramming for Tightening Threshold Voltage Distribution in Charge Trapping 3D NAND Flash Memory
2025 · You-Liang Chou, Wen-Jer Tsai, et al. · IEEE Electron Device Letters · 1
Simulation and fabrication of a new phase-shifting mask for 0.35 um contact hole pattern transfer: half-tone rim
1994 · Wen-An Loong, Shyi-Long Shy, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1
Complementary Asymmetric Coding in Dichotomized Bitlines for High Bit-Per-Cell 3D NAND Flash Technology
2025 · You-Liang Chou, Wen-Jer Tsai, et al. · IEEE Electron Device Letters
A Novel Data Recovery Technique for 3D TLC NAND Flash Memory Using Intercell Program
2023 · Y. L. Chou, W. J. Tsai, et al. · IEEE International Reliability Physics Symposium proceedings
Normally-off Operation GaN HEMT Devices with Nano-pattern Structure
2014 · Y.K. Fu, W.H. Kuo, et al. · International Conference on Solid State Devices and Materials (SSDM)
Works count: 16
Citation count: 115
H-index: 5
I10-index: 3
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