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Kuan-Cheng Su
Observed name:
Kuan-cheng Su
Institution:
United Microelectronics (Taiwan)
Observed institution:
United Microelectronics (Taiwan)
OpenAlex ID:
A5103551482
Novel input ESD protection circuit with substrate-triggering technique in a 0.25-μm shallow-trench-isolation CMOS technology
2002
·
Ming-Dou Ker
, Tung-Yang Chen
, et al.
·
IEEE International Symposium on Circuits and Systems proceedings
·
28
Latch-up free ESD protection design with SCR structure in advanced CMOS technology
2011
·
Chang-Tzu Wang
, Tien-Hao Tang
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
10
High-robust ESD protection structure with embedded SCR in high-voltage CMOS process
2008
·
Tai-Hsiang Lai
, Ming-Dou Ker
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
10
ESD protection design with lateral DMOS transistor in 40-V BCD technology
2010
·
Chang-Tzu Wang
, Ming-Dou Ker
, et al.
·
IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
·
6
Self-Heating p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors for Reliability Monitoring of Negative-Bias Temperature Instability
2007
·
Ting-Kuo Kang
, Chi-Shiun Wang
, et al.
·
Japanese Journal of Applied Physics
·
6
Design of High-Voltage-Tolerant Power-Rail ESD Clamp Circuit in Low-Voltage CMOS Processes
2007
·
Ming-Dou Ker
, Chang-Tzu Wang
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
6
Effects of Delay Time and AC Factors on Negative Bias Temperature Instability of PMOSFETs
2006
·
Jih-san Li
, Main-gwo Chen
, et al.
·
IEEE International Integrated Reliability Workshop final report
·
5
Design of modified ESD protection structure with low-trigger and high-holding voltage in embedded high voltage CMOS process
2011
·
Tai-Hsiang Lai
, Lu-An Chen
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
4
Optimization of PESD implant design for ESD robustness of 5V drain-back N-LDMOSFET
2016
·
Chun Chiang
, Ping-Chen Chang
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
3
ESD Robustness of 40-V CMOS Devices With/Without Drift Implant
2006
·
Wei-jen Chang
, Ming-dou Ker
, et al.
·
IEEE International Integrated Reliability Workshop final report
·
3
Ultra-Fast Negative Bias Temperature Instability Monitoring and End-of-Life Projection
2006
·
Chi-shiun Wang
, Wen-chun Chang
, et al.
·
IEEE International Integrated Reliability Workshop final report
·
3
Low-trigger ESD protection design with latch-up immunity for 5-V CMOS application by drain engineering
2017
·
Chun Chiang
, Ping-Chen Chang
, et al.
·
IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
·
2
Latch-up issue of drain metal connection split in test circuit with 3D TCAD simulation analysis in CMOS application
2019
·
Chun Chiang
, Ping-Chen Chang
, et al.
·
Solid State Electronics Letters
·
1
PDF
A novel high level ESD FDNSCR with drain side engineering in PMIC application
2015
·
Yi-Ning He
, Jhih-Ming Wang
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
1
ESD protection design with adjustable snapback behavior for 5-V application in 100nm CMOS process
2013
·
Chang-Tzu Wang
, Yu-Chun Chen
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
1
The modified P+ electrode layout schemes to enhance esd robustness of SCR structure for PMIC applications
2011
·
Lu-An Chen
, Chang-Tzu Wang
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
1
Comprehensive hot carrier mechanism investigation of 40V LDNMOS transistor
2007
·
Yi-Chun Wang
, Yi-Pin Chen
, et al.
·
IEEE International Integrated Reliability Workshop final report
·
1
Lower trigger voltage design for ESD protection device applied in PMIC application
2014
·
Yi-Ning He
, Lu-An Chen
, et al.
·
IEEE International Reliability Physics Symposium proceedings
Low-leakage electrostatic discharge protection circuit in 65-nm fully-silicided CMOS technology
2009
·
Chang-Tzu Wang
, Ming-Dou Ker
, et al.
·
IEEE International Conference on IC Design and Technology (ICICDT)
The Impact of N-Drift Implant on ESD Robustness of High-Voltage NMOS with Embedded SCR Structure in 40-V CMOS Process
2007
·
Wei-Jen Chang
, Ming-Dou Ker
, et al.
·
IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
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Works count:
20
Citation count:
91
H-index:
6
I10-index:
3
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