Author

Sanjay Kr. Jana

Observed name: Sanjay Jana

Institution: Indian Institute of Technology Kanpur

Observed institutions: National Institute of Technology Sikkim, Indian Institute of Technology Kharagpur, Indian Institute of Technology Kanpur

ORCID: 0009-0003-4617-2385

Observed ORCID: 0009-0003-4617-2385

OpenAlex ID: A5103764396

Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis

2015 · Syed Mukulika Dinara, Sanjay Kr. Jana, et al. · AIP Advances · 34

Graded barrier AlGaN/AlN/GaN heterostructure for improved 2-dimensional electron gas carrier concentration and mobility

2014 · Palash Das, Nripendra N. Halder, et al. · Electronic Materials Letters · 13

Analysis of strain induced carrier confinement with varying passivation thickness of the Al0.3Ga0.7N/GaN heterostructure with graded AlxGa1-xN buffer on Si (111) substrate

2017 · Syed Mukulika Dinara, Saptarsi Ghosh, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 3

Structural, optical, and transport properties of AlGaN/GaN and AlGaN/InGaN heterostructure on sapphire grown by plasma assisted molecular beam epitaxy

2015 · Sanjay Kr. Jana, Saptarsi Ghosh, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 1

Effects due to the solvent density distribution on the dynamics of polymer coils in solution under rheological flow fields

2026 · Sanjay Jana, Rishi Kumar, et al. · ChemRxiv

Design of a Normally-off HEMT using Double Quantum Well Structure with Improved Breakdown Characteristics

2022 · Jayati Routh, Sanjay Kr. Jana · International Journal of Electrical and Electronics Engineering

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Comparative study on hydrostatic strain, stress and dislocation density of Al0.3Ga0.7N/GaN heterostructure before and after a-Si3N4 passivation

2015 · Syed Mukulika Dinara, Sanjay Kr. Jana, et al. · AIP conference proceedings

Comparative High-Resolution X-Ray Diffraction Analysis of GaN/AlGaN Heterostructure on Al2O3 and Si (111) Substrate Grown by Plasma Assisted Molecular Beam Epitaxy

2015 · Sanjay Kr. Jana, Saptarsi Ghosh, et al. · MRS Proceedings

Works count: 8

Citation count: 51

H-index: 3

I10-index: 2