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Feng-Ming Lee

Observed names: F. M. Lee, Feng Ming Lee, Feng-Min Lee, Feng-Ming Lee Lee, Lee Feng-Ming, Lee, Feng-Ming
ORCID: 0000-0002-8898-0642
Observed ORCID: 0000-0002-8898-0642
OpenAlex ID: A5105473372
Performance Impacts of Analog ReRAM Non-ideality on Neuromorphic Computing
2019 · Yu-Hsuan Lin, Chao-Hung Wang, et al. · IEEE Transactions on Electron Devices · 75
An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM
2017 · H. Y. Cheng, W. C. Chien, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 62
Ultra-High Endurance and Low IOFF Selector based on AsSeGe Chalcogenides for Wide Memory Window 3D Stackable Crosspoint Memory
2018 · H. Y. Cheng, W. C. Chien, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 58
Multi-level 40nm WOX resistive memory with excellent reliability
2011 · Wei-Chih Chien, Ming-Hsiu Lee, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 39
A Novel Voltage-Accumulation Vector-Matrix Multiplication Architecture Using Resistor-shunted Floating Gate Flash Memory Device for Low-power and High-density Neural Network Applications
2018 · Yu-Yu Lin, Feng-Min Lee, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 24
In-Memory-Searching Architecture Based on 3D-NAND Technology with Ultra-high Parallelism
2020 · Po-Hao Tseng, Feng-Ming Lee, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 23
A study of the switching mechanism and electrode material of fully CMOS compatible tungsten oxide ReRAM
2011 · W. C. Chien, Y. C. Chen, et al. · Applied Physics A · 23
A Novel Ni/WOX/W Resistive Random Access Memory with Excellent Retention and Low Switching Current
2011 · Wei-Chih Chien, Yi-Chou Chen, et al. · Japanese Journal of Applied Physics · 19
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Bit-Cost-Scalable 3D DRAM Architecture and Unit Cell First Demonstrated with Integrated Gate-Around and Channel-Around IGZO FETs
2024 · Feng-Min Lee, Po-Hao Tseng, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 18
A novel tite buffered Cu-GeSbTe/SiO2 electrochemical resistive memory (ReRAM)
2010 · Yu-Yu Lin, Feng-Ming Lee, et al. · Symposium on VLSI Technology · 15
A Novel Varying-Bias Read Scheme for MLC and Wide Temperature Range TMO ReRAM
2016 · Yu-Hsuan Lin, Ming-Hsiu Lee, et al. · IEEE Electron Device Letters · 12
Silicon oxide-planarized single-mode 850-nm VCSELs with TO package for 10 Gb/s data transmission
2005 · Chia-Lung Tsai, Feng-Ming Lee, et al. · IEEE Electron Device Letters · 11
Device Instability of ReRAM and a Novel Reference Cell Design for Wide Temperature Range Operation
2017 · Y. H. Lin, Y. Y. Lin, et al. · IEEE Electron Device Letters · 10
High-Reliable and High-Speed 1.3 $\mu$m Complex-Coupled Distributed Feedback Buried-Heterostructure Laser Diodes With Fe-Doped InGaAsP/InP Hybrid Grating Layers Grown by MOCVD
2008 · Feng-Ming Lee, Chia-Lung Tsai, et al. · IEEE Transactions on Electron Devices · 10
Low-cost and high-performance 1.3-/spl mu/m AlGaInAs-InP uncooled laser diodes
2006 · Te-Chin Peng, Yun-Hsun Huang, et al. · IEEE Photonics Technology Letters · 10
NOR Flash-based Multilevel In-Memory-Searching Architecture for Approximate Computing
2022 · Yu-Hsuan Lin, Po-Hao Tseng, et al. · IEEE International Memory Workshop (IMW) · 9
An Analog In-Memory-Search Solution based on 3D-NAND Flash Memory for Brain-Inspired Computing
2022 · Po-Hao Tseng, Yu-Hsuan Lin, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 8
In-Memory Approximate Computing Architecture Based on 3D-NAND Flash Memories
2022 · Po-Hao Tseng, Yu-Hsuan Lin, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 8
A comprehensive study of 3-stage high resistance state retention behavior for TMO ReRAMs from single cells to a large array
2017 · Yu-Hsuan Lin, Yung-Han Ho, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 8
Temperature Dependent Photoluminescence of Self-Organized InAs Quantum Dots on an InGaAs Strain Buffer Layer Grown by MOCVD
2007 · Kun-Fu Huang, Feng-Ming Lee, et al. · Electrochemical and Solid-State Letters · 8
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High-speed and uncooled operation of 1.3-/spl mu/m InGaAsP strain-compensated MQW BH lasers fabricated on patterned InP substrates
2006 · Chih-Wei Hu, Feng-Ming Lee, et al. · Journal of Lightwave Technology · 8
SLC and MLC In-Memory-Approximate-Search Solutions in Commercial 48-layer and 96-layer 3D-NAND Flash Memories
2023 · Po-Hao Tseng, Tian-Cig Bo, et al. · IEEE International Memory Workshop (IMW) · 7
A model for the RESET operation of electrochemical conducting bridge resistive memory (CB-ReRAM)
2010 · Yu-Yu Lin, Feng-Ming Lee, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 6
Error free physically unclonable function with programmed resistive random access memory using reliable resistance states by specific identification-generation method
2018 · Po-Hao Tseng, Kai-Chieh Hsu, et al. · Japanese Journal of Applied Physics · 5
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Uncooled 1.3-/spl mu/m complex-coupled DFB BH laser diodes with the Fe-doped InGaAsP-InP hybrid current-blocking grating
2006 · Chih-Wei Hu, Feng-Ming Lee, et al. · IEEE Photonics Technology Letters · 5
Works count: 61
Citation count: 530
H-index: 11
I10-index: 15
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