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Masaaki Kinugawa
Observed names:
M. Kinugawa,
M.Kinugawa
Observed institution:
Toshiba (Japan)
OpenAlex ID:
A5108076531
A 0.9-V, 150-MHz, 10-mW, 4 mm/sup 2/, 2-D discrete cosine transform core processor with variable threshold-voltage (VT) scheme
1996
·
T. Kuroda
, T. Fujita
, et al.
·
IEEE Journal of Solid-State Circuits
·
475
Future perspective and scaling down roadmap for RF CMOS
1999
·
E. Morifuji
, H.S. Momose
, et al.
·
Symposium on VLSI Technology
·
99
Power-supply voltage impact on circuit performance for half and lower submicrometer CMOS LSI
1990
·
M. Kakumu
, M. Kinugawa
·
IEEE Transactions on Electron Devices
·
56
Choice of power-supply voltage for half-micrometer and lower submicrometer CMOS devices
1990
·
M. Kakumu
, M. Kinugawa
, et al.
·
IEEE Transactions on Electron Devices
·
41
Low-resistivity poly-metal gate electrode durable for high-temperature processing
1996
·
Y. Akasaka
, S. Suehiro
, et al.
·
IEEE Transactions on Electron Devices
·
32
Future perspective and scaling down roadmap for RF CMOS
2003
·
E. Morifuji
, H.S. Momose
, et al.
·
Symposium on VLSI Circuits
·
30
Anomalous hot-carrier induced degradation in very narrow channel nMOSFETs with STI structure
2002
·
M. Nishigohri
, K. Ishimaru
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
28
Effects of silicon surface orientation on submicron CMOS devices
1985
·
M. Kinugawa
, M. Kakumu
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
26
Submicron MLDO NMOSFETs for 5V Operation
1985
·
Masaaki Kinugawa
, M. Kakumu
, et al.
·
Symposium on VLSI Technology
·
18
Reliability and performance of submicron LDD NMOSFET's with buried As n-impurity profiles
1985
·
H.R. Grinolds
, M. Kinugawa
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
18
Power supply voltage for future CMOS VLSI in half and sub micrometer
1986
·
M. Kakumu
, M. Kinugawa
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
15
High performance MIM capacitor for RF BiCMOS/CMOS LSIs
2003
·
T. Yoshitomi
, Y. Ebuchi
, et al.
·
IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
·
14
Drain structure optimization for highly reliable deep submicrometer n-channel MOSFET
1994
·
F. Matsuoka
, K. Kasai
, et al.
·
IEEE Transactions on Electron Devices
·
14
A 4-Mb CMOS SRAM with a PMOS thin-film-transistor load cell
1990
·
T. Ootani
, S. Hayakawa
, et al.
·
IEEE Journal of Solid-State Circuits
·
14
Improvement of 1/f noise by using VHP (vertical high pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS
1999
·
H. Kimijima
, T. Ohguro
, et al.
·
Symposium on VLSI Technology
·
13
1-Mbit virtually static RAM
1986
·
K. Nogami
, T. Sakurai
, et al.
·
IEEE Journal of Solid-State Circuits
·
10
TFT (thin film transistor) cell technology for 4 Mbit and more high density SRAMs
1990
·
M. Kinugawa
, M. Kakumu
, et al.
·
Symposium on VLSI Technology
·
9
Submicron 3D Surface-Orientation-Optimized CMOS Technology
1986
·
Masaaki Kinugawa
, M. Kakumu
, et al.
·
Symposium on VLSI Technology
·
9
A 36ns 1Mbit Pseudo SRAM with VSRAM mode
1987
·
Takayasu Sakurai
, K. Sawada
, et al.
·
Symposium on VLSI Circuits
·
8
VLSI circuit reliability under AC hot-carrier stress
1987
·
K. Nogami
, K. Sawada
, et al.
·
Symposium on VLSI Circuits
·
8
A 1 mu A retention 4 Mb SRAM with a thin-film-transistor load cell
1990
·
S. Hayakawa
, M. Kakumu
, et al.
·
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
·
6
A 30- mu A data-retention pseudostatic RAM with virtually static RAM mode
1988
·
K. Sawada
, T. Sakurai
, et al.
·
IEEE Journal of Solid-State Circuits
·
6
A 1Mb virtually SRAM
1986
·
T. Sakurai
, K. Sawada
, et al.
·
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
·
6
Cell technology directions for advanced MPUs and other memory-embedded logic devices
2002
·
M. Kinugawa
, M. Kakumu
·
Technical digest - International Electron Devices Meeting/Technical digest
·
4
W/WNx/poly-Si gate technology for future high speed deep submicron CMOS LSIs
2002
·
K. Kasai
, Y. Akasaka
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
4
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Works count:
43
Citation count:
989
H-index:
14
I10-index:
16
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