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Kazuki Miwa
Observed name:
和希 三輪
Institutions:
Hokkaido University,
Research Center for Integrated Quantum Electronics, Hokkaido University
Observed institutions:
Hokkaido University,
Research Center for Integrated Quantum Electronics, Hokkaido University
OpenAlex ID:
A5108268561
Simple wet-etching technology for GaN using an electrodeless photo-assisted electrochemical reaction with a luminous array film as the UV source
2019
·
Fumimasa Horikiri
, Noboru Fukuhara
, et al.
·
Applied Physics Express
·
29
PDF
Electrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O8 2– ions
2019
·
Masachika Toguchi
, Kazuki Miwa
, et al.
·
Applied Physics Express
·
24
PDF
Self-termination of contactless photo-electrochemical (PEC) etching on aluminum gallium nitride/gallium nitride heterostructures
2020
·
Kazuki Miwa
, Yuto Komatsu
, et al.
·
Applied Physics Express
·
17
PDF
Thermal-assisted contactless photoelectrochemical etching for GaN
2020
·
Fumimasa Horikiri
, Noboru Fukuhara
, et al.
·
Applied Physics Express
·
10
PDF
Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices
2019
·
Fumimasa Horikiri
, Taketomo Sato
, et al.
·
IEEE Transactions on Semiconductor Manufacturing
·
10
PDF
Self-terminating contactless photo-electrochemical (CL-PEC) etching for fabricating highly uniform recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs)
2021
·
Masachika Toguchi
, Kazuki Miwa
, et al.
·
Journal of Applied Physics
·
8
PDF
Fabrication of GaN nanowires containing n+-doped top layer by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatment
2021
·
Michihito Shimauchi
, Kazuki Miwa
, et al.
·
Applied Physics Express
·
6
PDF
Communication—Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect
2019
·
Masachika Toguchi
, Kazuki Miwa
, et al.
·
Journal of The Electrochemical Society
·
2
PDF
Cathode-electrode on photoelectrochemical (PEC) etching for n-GaN on n+GaN substrate
2021
·
Noboru Fukuhara
, Fumimasa Horikiri
, et al.
·
The Japan Society of Applied Physics
Fabrication of Recessed-Gate AlGaN/GaN Hemts Utilizing Contactless Photo-Electrochemical (CL-PEC) Etching
2020
·
Masachika Toguchi
, Kazuki Miwa
, et al.
·
ECS Meeting Abstracts
Thermal assisted contactless photoelectrochemical (PEC) etching for GaN
2020
·
Fumimasa Horikiri
, Noboru Fukuhara
, et al.
·
The Japan Society of Applied Physics
Thermal-assisted generation of sulfate radicals for contactless photo electrochemical (PEC) etching of n-GaN
2020
·
Kazuki Miwa
, Hiroki Ogami
, et al.
·
The Japan Society of Applied Physics
コンタクトレス光電気化学(pec)エッチングを用いたリセスゲートhemtの作製
2020
·
文正 堀切
, 昇 福原
, et al.
·
IEICE Technical Report; IEICE Tech. Rep.
Simple Photoelectrochemical Etching for Recess Gate GaN HEMT
2020
·
Fumimasa Horikiri
, Noboru Fukuhara
, et al.
·
IEICE Technical Report; IEICE Tech. Rep.
Contactless Photoelectrochemical Etching of n-GaN in K 2 S 2 O 8 /H 3 PO 4 Mixed Solution
2019
·
Masachika Toguchi
, Kazuki Miwa
, et al.
·
The Japan Society of Applied Physics
Fabrication GaN nanowires by electrodeless photo-assisted electrochemical etching and wet etching
2019
·
Michihito Shimauchi
, Kazuki Miwa
, et al.
·
The Japan Society of Applied Physics
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Works count:
16
Citation count:
106
H-index:
6
I10-index:
5
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