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Barbara E. Landini

Observed names: B. E. Landini, B. Landini, B.E. Landini, Barbara Landini, Landini, B. E., Landini, B.E.
OpenAlex ID: A5108538195
Ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer
2014 · Weiquan Yang, Jacob Becker, et al. · Journal of Applied Physics · 91
Breath Acetone Concentration Measured Using a Palm-Size Enzymatic Sensor System
2009 · Barbara E. Landini, Shane T. Bravard · IEEE Sensors Journal · 41
Characteristics of homoepitaxial 4H-SiC films grown on c -axis substrates offcut towards 〈1100〉 or 〈1120〉
1999 · B. E. Landini, G. R. Brandes · Applied Physics Letters · 22
Susceptor effects on the morphological and impurity properties of 4H-SiC epilayers
2000 · Barbara E. Landini · Journal of Electronic Materials · 14
Effect of Exhalation Variables on the Current Response of an Enzymatic Breath Acetone Sensing Device
2009 · Barbara E. Landini, Shane T. Bravard · IEEE Sensors Journal · 10
Si-Ge-Sn alloys with 1.0 eV gap for CPV multijunction solar cells
2015 · Radek Roucka, Andrew Clark, et al. · AIP conference proceedings · 8
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Ultra-thin GaAs single-junction solar cells integrated with an AlInP layer for reflective back scattering
2013 · Weiquan Yang, Jacob Becker, et al. · Conference record of the IEEE Photovoltaic Specialists Conference · 7
Impact of Compositionally Graded Base Regions on the DC and RF Properties of Reduced Turn-On Voltage InGaP–GaInAsN DHBTs
2004 · K.S. Stevens, R.J. Welty, et al. · IEEE Transactions on Electron Devices · 5
Pathway for HBT Turn-on Voltage Reduction on a GaAs Platform
2001 · Roger E. Welser, P.M. DeLuca, et al. · 3
Enhanced Performance GaAs-Based HBTs using a GaInNAs Base Layer
2001 · Stevens, K.S., Welser, R. E., et al. · AMS Acta (University of Bologna) · 3
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Base transport characteristics of InP DHBTS grown by MOVPE
2003 · B.E. Landini, P.M. Deluca, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 2
Enhanced CDMA performance from an InGaP/InGaAsN/GaAs N-p-N double heterojunction bipolar transistor
2003 · R. Yarborough, B. Landini, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 2
4H-SiC Substrate Orientation Effects on Hydrogen Etching and Epitaxial Growth
2000 · B.E. Landini, George R. Brandes · Materials science forum · 2
Carbon Doped InP/InGaAs Heterojunction Bipolar Transistors Grown By MOCVD
2001 · Deluca, P.M., Landini, B.E., et al. · AMS Acta (University of Bologna) · 1
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Single and multijunction solar cells with 1.0 eV Si-Ge-Sn junction
2015 · Radek Roucka, Andrew Clark, et al. · Conference record of the IEEE Photovoltaic Specialists Conference
Enhancing the Device Performance of III-V Based Bipolar Transistors
2002 · Lutz, C.R., Deluca, P.M., et al. · Università degli Studi di Bologna
Base Layer Band Gap Engineering for III-V Bipolar Devices
2002 · P.M. DeLuca, Charles R. Lutz, et al.
High Spatial Resolution Thermal Conductivity investigation of SiC Wafers
2001 · D.I. Florescu, Fred H. Pollak, et al. · MRS Proceedings
Growth, Fabrication, and Device Characterization of Indium Gallium Arsenide Channel Gallium Arsenide-Based Heterostructure Field Effect Transistors.
1996 · Barbara Landini · ScholarWorks@UMassAmherst (University of Massachusetts Amherst)
Growth, fabrication, and device characterization of InGaAs channel GaAs-based heterostructure field-effect transistors
1996 · Barbara Landini
Works count: 20
Citation count: 211
H-index: 7
I10-index: 5
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