Author

Yoonho Khang

Observed names: Y Khang, Y. H. Khang, Y. Khang, YoonHo Khang

Institution: Samsung Display (South Korea)

Observed institutions: Seoul National University, Lawrence Berkeley National Laboratory, Samsung (South Korea), Samsung Advanced Institute of Technology (South Korea), Samsung Electronics (South Korea), Samsung Display (South Korea), University of California, Berkeley

OpenAlex ID: A5108549668

Direct evidence of phase separation in Ge2Sb2Te5 in phase change memory devices

2009 · Cheolkyu Kim, Dongmin Kang, et al. · Applied Physics Letters · 99

Fullerene thermal insulation for phase change memory

2008 · Cheolkyu Kim, Dong-Seok Suh, et al. · Applied Physics Letters · 67

Phase separation behavior of Ge2Sb2Te5 line structure during electrical stress biasing

2008 · Sung-Wook Nam, Cheolkyu Kim, et al. · Applied Physics Letters · 50

Low thermal conductivity in Ge2Sb2Te5–SiOx for phase change memory devices

2009 · Tae-Yon Lee, Kijoon H. P. Kim, et al. · Applied Physics Letters · 49

Thermoelectric heating of Ge2Sb2Te5 in phase change memory devices

2010 · Dong-Seok Suh, Cheolkyu Kim, et al. · Applied Physics Letters · 48

Bias and illumination instability analysis of solution-processed a-InGaZnO thin-film transistors with different component ratios

2017 · Ji-Hwan Kim, Eung-Kyu Park, et al. · Thin Solid Films · 44

Global and local structures of the Ge-Sb-Te ternary alloy system for a phase-change memory device

2006 · Jae-Hyeon Eom, Young-Gui Yoon, et al. · Physical Review B · 37

Generation of phase-change Ge–Sb–Te nanoparticles by pulsed laser ablation

2005 · H.R. Yoon, W. Jo, et al. · Journal of Non-Crystalline Solids · 31

Electric-Field-Induced Mass Movement of Ge[sub 2]Sb[sub 2]Te[sub 5] in Bottleneck Geometry Line Structures

2009 · Sung-Wook Nam, Dongbok Lee, et al. · Electrochemical and Solid-State Letters · 29

Effect of indium on phase-change characteristics and local chemical states of In–Ge–Sb–Te alloys

2008 · H. J. Shin, Youn-Seon Kang, et al. · Applied Physics Letters · 27

Crystalline and amorphous structures of Ge–Sb–Te nanoparticles

2007 · Gyeong-Su Park, Ji-Hwan Kwon, et al. · Journal of Applied Physics · 26

Nonvolatile switching characteristics of laser-ablated Ge2Sb2Te5 nanoparticles for phase-change memory applications

2007 · Dong-Seok Suh, Eunhye Lee, et al. · Applied Physics Letters · 26

Synthesis of Si nanoparticles with narrow size distribution by pulsed laser ablation

2009 · Yoonho Khang, Joohyun Lee · Journal of Nanoparticle Research · 22

Effect of atomic hydrogen on the growth of Ge/Si(100)

1997 · Se-Jong Kahng, J. Y. Park, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 22

Rapid crystallization of GeTe–Bi2Te3 mixed layer

2008 · Tae-Yon Lee, Cheolkyu Kim, et al. · Applied Physics Letters · 18

Low temperature ultrahigh vacuum cross-sectional scanning tunneling microscope for luminescence measurements

1999 · Yoonho Khang, Yeonjoon Park, et al. · Review of Scientific Instruments · 16

Large Scale Assembly of Pristine Semiconducting Carbon Nanotube Network-Based Devices Exhibiting Intrinsic Characteristics

2013 · Jeongsu Kim, Daniel Hong, et al. · The Journal of Physical Chemistry C · 15

Valence band structures of the phase change material Ge2Sb2Te5

2007 · Dohyun Lee, Sang Sun Lee, et al. · Applied Physics Letters · 13

Direct imaging of SiO2 thickness variation on Si using modified atomic force microscope

1996 · K. M. Mang, Y. Khang, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 12

Structure of nickel silicide on Si(001): An atomic view

1994 · Yoonho Khang, S. J. Kahng, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 11

Critical Quenching Speed Determining Phase of Ge2Sb2Te5 in Phase--Change Memory

2006 · D.- S. Suh, K.H.P. Kim, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 9

Multiple phase structures of NiSi2 on Si(001): An atomic view

1996 · Y. Khang, Y. Kuk · Physical review. B, Condensed matter · 9

Floating electrode transistor based on purified semiconducting carbon nanotubes for high source–drain voltage operation

2012 · Joohyung Lee, Hyungwoo Lee, et al. · Nanotechnology · 7

Electronic structure of (Ge2Sb2Te5)1−x(In3SbTe2)x investigated by x-ray photoelectron spectroscopy

2009 · Anass Benayad, YounSeon Kang, et al. · Journal of Applied Physics · 6

Hierarchical structure and phase transition of (GeTe)n(Sb2Te3)m used for phase-change memory

2008 · Jino Im, Jae-Hyeon Eom, et al. · Physical Review B · 6

Works count: 49

Citation count: 744

H-index: 16

I10-index: 20