Author

J.P. Chante

Observed names: CHANTE, Jean-Pierre, Chante, J, P, Chante, J.-P, Chante, JP, Chante, Jean-Pierre, Chante, Jean-Pierre, P, J P Chante, J. Chante, J. P. Chante, J.-P Chante, J.-P. Chante, J.P Chante, J.P. CHANTE, JP. Chante, Jean Pierre Chante, Jean-Pierre Chante, Jean-pierre Chante

Observed institutions: École Centrale de Lyon, Centre National de la Recherche Scientifique, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, National Institute for Research and Development in Microtechnologies, Laboratoire Ampère, Laboratoire d'Électronique des Technologies de l'Information, Institut National des Sciences Appliquées de Lyon, École d'Ingénieurs en Chimie et Sciences du Numérique

OpenAlex ID: A5108820775

Electrothermal modeling of IGBTs: application to short-circuit conditions

2000 · A. Ammous, K. Ammous, et al. · IEEE Transactions on Power Electronics · 54

Field effect in large grain polycrystalline silicon

1983 · J.-P. Colinge, H. Morel, et al. · IEEE Transactions on Electron Devices · 50

State variable modeling of the power pin diode using an explicit approximation of semiconductor device equations: a novel approach

1994 · H. Morel, S.H. Gamal, et al. · IEEE Transactions on Power Electronics · 48

Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

2000 · N.S. Savkina, A.A. Lebedev, et al. · Materials Science and Engineering B · 44

A Current Conveyor based Field Programmable Analog Array

1998 · Christophe Premont, Richard Grisel, et al. · Springer eBooks · 38

LDMOS modeling for analog and RF circuit design

2005 · A. Canepari, G. Bertrand, et al. · European Solid-State Device Research Conference · 29

Chemical contribution of oxygen to silicon carbide plasma etching kinetics in a distributed electron cyclotron resonance (DECR) reactor

1999 · Frédéric Lanois, Dominique Planson, et al. · Journal of Electronic Materials · 26

Montecarlo simulation of ion implantation into SiC-6H single crystal including channeling effect

1997 · E. Morvan, P. Godignon, et al. · Materials Science and Engineering B · 26

A BiCMOS Current Conveyor Based Four-Quadrant Analog Multiplier

1999 · Christophe Premont, Nacer Abouchi, et al. · Analog Integrated Circuits and Signal Processing · 24

Analytical expression for the potential of guard rings of diodes operating in the punchthrough mode

1985 · V. Boisson, M. Le Helley, et al. · IEEE Transactions on Electron Devices · 24

Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers

2003 · M. Lazar, C. Raynaud, et al. · Journal of Applied Physics · 23

Investigations on the thermal behavior of interconnects under ESD transients using a simplified thermal RC network

2002 · P. Salome, C. Leroux, et al. · Electrical Overstress/Electrostatic Discharge Symposium · 23

A Current Conveyor based Field Programmable Analog Array

1998 · Christophe Premont, Richard Grisel, et al. · Analog Integrated Circuits and Signal Processing · 23

Effect of boron diffusion on the high-voltage behavior of 6H-SiC p+nn+ structures

1996 · S. Ortolland, C. Raynaud, et al. · Journal of Applied Physics · 23

Developing an equivalent thermal model for discrete semiconductor packages

2003 · Anis Ammous, Fayçal Sellami, et al. · International Journal of Thermal Sciences · 22

Avalanche Behavior of Low-Voltage Power MOSFETs

2004 · C. Buttay, T.B. Salah, et al. · IEEE Power Electronics Letters · 21

Current-conveyor based field programmable analog array

2002 · C. Premont, R. Grisel, et al. · IEEE International Midwest Symposium on Circuits and Systems (MWSCAS) · 21

Study of a 3D phenomenon during ESD stresses in deep submicron CMOS technologies using photon emission tool

2002 · P. Salome, C. Leroux, et al. · IEEE International Reliability Physics Symposium proceedings · 21

An attempt to explain thermally induced soft failures during low level ESD stresses: study of the differences between soft and hard NMOS failures

1998 · P. Salome, C. Leroux, et al. · Microelectronics Reliability · 21

A current conveyor-based high-frequency analog switch

1998 · C. Premont, N. Abouchu, et al. · IEEE Transactions on Circuits and Systems I Fundamental Theory and Applications · 20

Computer study of a high-voltage a p-π-n--n+diode and comparison with a field-limiting ring structure

1986 · V. Boisson, M. Le Helley, et al. · IEEE Transactions on Electron Devices · 18

A current conveyor based capacitive multiplier

2002 · C. Premont, R. Grisel, et al. · IEEE International Midwest Symposium on Circuits and Systems (MWSCAS) · 17

High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing

2001 · Mihai Lazar, Laurent Ottaviani, et al. · Materials science forum · 17

Periphery protection for silicon carbide devices: state of the art and simulation

1997 · D. Planson, M.L. Locatelli, et al. · Materials Science and Engineering B · 17

Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H- and 6H-SiC.

2002 · Roberta Nipoti, Francesco Moscatelli, et al. · MRS Proceedings · 16

Works count: 173

Citation count: 1,082

H-index: 20

I10-index: 39