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J. Ramer

Observed names: J Ramer, J. C. Ramer, J.C. Ramer, Jeffrey C. Ramer, Jeffrey Ramer, Ramer, J.
OpenAlex ID: A5109075690
Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopy
2000 · D. I. Florescu, V. M. Asnin, et al. · Applied Physics Letters · 123
Nonalloyed Ti/Al Ohmic contacts to n-type GaN using high-temperature premetallization anneal
1996 · L. F. Lester, J. M. Brown, et al. · Applied Physics Letters · 109
Morphological evolution of InGaN/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition
2003 · S. M. Ting, J. C. Ramer, et al. · Journal of Applied Physics · 101
Morphology and photoluminescence improvements from high-temperature rapid thermal annealing of GaN
1996 · J. C. Zolper, M. Hagerott Crawford, et al. · Applied Physics Letters · 94
Influence of oxygen on the activation of p-type GaN
2000 · B. A. Hull, S. E. Mohney, et al. · Applied Physics Letters · 93
Investigation of V-Defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire
2003 · D. I. Florescu, S. M. Ting, et al. · Applied Physics Letters · 90
High spatial resolution thermal conductivity of lateral epitaxial overgrown GaN/sapphire (0001) using a scanning thermal microscope
1999 · V. M. Asnin, Fred H. Pollak, et al. · Applied Physics Letters · 85
Temperature Behavior of Pt/Au Ohmic Contacts to p-GaN
1997 · D. J. King, L. Zhang, et al. · MRS Proceedings · 71
Electron cyclotron resonance etching characteristics of GaN in SiCl4/Ar
1996 · L. Zhang, J. Ramer, et al. · Applied Physics Letters · 61
The role of the low temperature buffer layer and layer thickness in the optimization of OMVPE growth of GaN on sapphire
1995 · S. D. Hersee, J. Ramer, et al. · Journal of Electronic Materials · 60
Computational analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors
2003 · L. Kadinski, V. Merai, et al. · Journal of Crystal Growth · 59
Reactor design optimization based on 3D modeling of nitrides deposition in MOCVD vertical rotating disc reactors
2006 · B. Mitrovic, A. Parekh, et al. · Journal of Crystal Growth · 51
Raman microscopy of lateral epitaxial overgrowth of GaN on sapphire
1999 · M. Pophristic, F. H. Long, et al. · Applied Physics Letters · 48
The Microstructure of Metalorganic-Chemical-Vapor-Deposition GaN on Sapphire
1997 · S.D. Hersee, J.C. Ramer, et al. · MRS Bulletin · 43
In situ metrology advances in MOCVD growth of GaN-based materials
2004 · M. Belousov, B. Volf, et al. · Journal of Crystal Growth · 36
Sapphire substrate misorientation effects on GaN nucleation layer properties
2004 · D. Lu, D.I. Florescu, et al. · Journal of Crystal Growth · 33
Advanced characterization studies of sapphire substrate misorientation effects on GaN-based LED device development
2003 · D. Lu, D. I. Florescu, et al. · physica status solidi (a) · 24
Observation of subsurface monolayer thickness fluctuations in InGaN∕GaN quantum wells by scanning capacitance microscopy and spectroscopy
2004 · X. Zhou, E. T. Yu, et al. · Applied Physics Letters · 23
In Ga N ∕ Ga N single-quantum-well light-emitting diodes optical output efficiency dependence on the properties of the barrier layer separating the active and p-layer regions
2004 · D. I. Florescu, J. C. Ramer, et al. · Applied Physics Letters · 16
Spontaneous compositional modulation in the AlGaN layers of a thick AlGaN/GaN multilayer structure
2001 · I. Levin, L. H. Robins, et al. · Journal of Applied Physics · 13
Edge-emitting electroluminescence polarization investigation of InGaN/GaN light-emitting diodes grown by metal-organic chemical vapor deposition on sapphire (0001)
2003 · D. I. Florescu, D. S. Lee, et al. · Journal of Electronic Materials · 12
A Study of the Effect of Growth Rate and Annealing on GaN Buffer Layers on Sapphire
1995 · J.C. Ramer, K. Zheng, et al. · MRS Proceedings · 11
AFM and temperature-dependent photoluminescence studies of the degree of localization induced by quantum-dot like states in InGaN single quantum well light emitting diodes grown by MOCVD on (0001) sapphire
2004 · D.I. Florescu, J.C. Ramer, et al. · Journal of Crystal Growth · 9
Observation of In concentration variations in InGaN∕GaN quantum-well heterostructures by scanning capacitance microscopy
2005 · X. Zhou, E. T. Yu, et al. · Applied Physics Letters · 8
Electron cyclotron resonance etching characteristics of GaN in plasmas with and without hydrogen
1995 · L. Zhang, J. Ramer, et al. · MRS Proceedings · 7
Works count: 49
Citation count: 1,317
H-index: 18
I10-index: 22
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