Author

A.G.M. Das

Observed names: A G M Das, A. G. M. Das, A.g.M. Das

Institution: IIE MSA

Observed institutions: Sefako Makgatho Health Sciences University, IIE MSA, Monash University

OpenAlex ID: A5109132952

A study of the T2 defect and the emission properties of the E3 deep level in annealed melt grown ZnO single crystals

2013 · W. Mtangi, M. Schmidt, et al. · Journal of Applied Physics · 12

A study of the dependence of electron-induced defects on the doping impurity density in n-type germanium by deep-level transient spectroscopy (DLTS)

2007 · Cloud Nyamhere, F.D. Auret, et al. · Physica B Condensed Matter · 6

A comparative study of electronic properties of the defects introduced in p-Si: (i) During electron beam deposition of Ti/Mo, (ii) by proton irradiation, and (iii) by electron irradiation

2009 · A.G.M. Das, C. Nyamhere, et al. · Surface and Coatings Technology · 5

Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2MeV proton irradiation

2011 · C. Nyamhere, A.G.M. Das, et al. · Physica B Condensed Matter · 4

Thermal Stability of Ti/Mo Schottky Contacts on p-Si and Defects Introduced in p-Si during Electron Beam Deposition of Ti/Mo

2005 · F. Danie Auret, A.G.M. Das, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 4

Characterization of defects introduced in Sb doped Ge by 3keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)

2009 · C. Nyamhere, A.G.M. Das, et al. · Physica B Condensed Matter · 3

Thermal stability of Co, Ni, Pt or Ru Schottky contacts on n-Si and defects introduced thereon during contacts fabrication using electron beam deposition

2007 · Cloud Nyamhere, A. Chawanda, et al. · Physica B Condensed Matter · 3

Improved reliability of bistable circuits by selective hot-carrier stress reduction

1998 · A.G.M. Das, S. Johnson · Microelectronics Reliability · 3

Technology assisted enhanced teaching and learning methods: A research project at Monash University

2012 · A. G. M. Das · International Conference on Digital Information and Communication Technology and its Applications (DICTAP) · 2

Hot-electron induced impact-ionisation damage at the interface of sub-micron silicon MOS devices: Model and monitor

2009 · A.G.M. Das · Physica B Condensed Matter · 2

Deep level transient spectroscopy characterization of defects introduced inp-Si by electron beam deposition and proton irradiation

2008 · C Nyamhere, A G M Das, et al. · Journal of Physics Conference Series · 2

Effect of wearout processes on the critical timing parameters and reliability of CMOS bistable circuits

1997 · A.G.M. Das · Durham e-Theses (Durham University) · 2

A unique technique for reducing the effects of hot-carrier induced degradations in CMOS bistable circuits for fault tolerant VLSI design

2013 · A.G.M. Das · International Conference on Technological Advances in Electrical, Electronics and Computer Engineering

Web-based technology assisted teaching: A pilot project at Monash University

2010 · A.g.M. Das · Annual International Conference on Infocomm Technologies in Competitive Strategies (ICT)

Thermal Stability of Ti/Mo Schottky Contacts on p-Si and Defects Introduced in p-Si during Electron Beam Deposition of Ti/Mo

2005 · F.D. Auret, A.G.M. Das, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena

Works count: 15

Citation count: 48

H-index: 4

I10-index: 1