Author

Wilfried Lerch

Observed name: Lerch, Wilfried

Institutions: Fraunhofer Research Institution for Microsystems and Solid State Technologies, HQ-Dielectrics (Germany), Fraunhofer Institute for Integrated Systems and Device Technology

Observed institutions: Centre National de la Recherche Scientifique, Laboratoire d'Analyse et d'Architecture des Systèmes, Mattson Technology (Germany), Dorma (Germany), STMicroelectronics (France), Fraunhofer Research Institution for Microsystems and Solid State Technologies, HQ-Dielectrics (Germany), Fraunhofer Institute for Integrated Systems and Device Technology, Centrotherm Photovoltaics (Germany), STEAG (Germany), Université de Toulouse, Leibniz Institute for High Performance Microelectronics

ORCID: 0009-0009-9739-1469

Observed ORCID: 0009-0009-9739-1469

OpenAlex ID: A5109225422

Studying dopant diffusion from Poly-Si passivating contacts

2019 · Frank Feldmann, Jonas Schön, et al. · Solar Energy Materials and Solar Cells · 87

Advanced Thermal Processing of Ultrashallow Implanted Junctions Using Flash Lamp Annealing

2005 · Wolfgang Skorupa, Thoralf Gebel, et al. · Journal of The Electrochemical Society · 82

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Millisecond Annealing: Past, Present and Future

2006 · Paul Timans, Jeff Gelpey, et al. · MRS Proceedings · 32

The Effects of Small Concentrations of Oxygen in RTP Annealing of Low Energy Boron, BF2 and Arsenic Ion Implants

1998 · Daniel F. Downey, Judy W. Chow, et al. · MRS Proceedings · 32

Detailed investigation of Ge–Si interdiffusion in the full range of Si1−xGex(≤x≤1) composition

2008 · Mathieu Gavelle, El Mehdi Bazizi, et al. · Journal of Applied Physics · 31

Reflow process optimization for micro-bumps applications in 3D technology

2014 · Jaber Derakhshandeh, Inge De Preter, et al. · Electronic System-Integration Technology Conference (ESTC) · 16

Influence of boron-interstitials clusters on hole mobility degradation in high dose boron-implanted ultrashallow junctions

2010 · Fabrice Severac, Fuccio Cristiano, et al. · Journal of Applied Physics · 14

Mechanistic benefits of millisecond annealing for diffusion and activation of boron in silicon

2009 · Charlotte T. M. Kwok, Richard D. Braatz, et al. · Journal of Applied Physics · 13

Crystal Damage Removal by Spike and Flash Annealing

2006 · Wilfried Lerch, Silke Paul, et al. · ECS Transactions · 12

Activation, Diffusion and Defect Analysis of a Spike Anneal Thermal Cycle

2004 · Silke Paul, Wilfried Lerch, et al. · MRS Proceedings · 12

An Overview of ms Annealing for Deep Sub-Micron Activation

2008 · Jeffrey C. Gelpey, Steve McCoy, et al. · Materials science forum · 11

Advanced Thermal Processing of Semiconductor Materials by Flash Lamp Annealing

2004 · W. Skorupa, D. Panknin, et al. · MRS Proceedings · 10

Strengths and Limitations of the Vacancy Engineering Approach for the Control of Dopant Diffusion and Activation in Silicon

2008 · Alain Claverie, Fuccio Cristiano, et al. · MRS Proceedings · 8

RTP requirements to yield uniform and repeatable ultra-shallow junctions with low energy boron and BF2 ion implants

1998 · Steven Marcus, Wilfried Lerch, et al. · Journal of Electronic Materials · 8

An improved model for boron diffusion and activation in silicon

2009 · Charlotte T. M. Kwok, Richard D. Braatz, et al. · AIChE Journal · 7

Defect Injection and Diffusion in Semiconductors

1994 · Nicolaas Stolwijk, Hartmut Bracht, et al. · Materials science forum · 7

Impact of boron-interstitial clusters on Hall scattering factor in high-dose boron-implanted ultrashallow junctions

2009 · Fabrice Severac, Fuccio Cristiano, et al. · Journal of Applied Physics · 6

Fast Diffusion in Germanium and Silicon Investigated by Lamp-Based Rapid Thermal Annealing

2008 · Nicolaas Stolwijk, Ludmila Lerner, et al. · Materials science forum · 6

Modeling and Simulation of Advanced Annealing Processes

2008 · Alberto Martinez-Limia, Peter Pichler, et al. · Materials science forum · 6

Aluminum Josephson Junction Formation on 200mm Wafers Using Different Oxidation Techniques

2023 · Simon Lang, Alexandra Schewski, et al. · ECS Transactions · 5

(Invited) Low-Temperature Microwave-Based Plasma Oxidation of Ge and Oxidation of Silicon Followed by Plasma Nitridation

2016 · Wilfried Lerch, T. Schick, et al. · ECS Transactions · 5

Carrier density profiling of ultra-shallow junction layer through corrected C-V plotting

2008 · James Chen, Dimitar Dimitrov, et al. · International Workshop on Junction Technology · 5

On a computationally efficient approach to boron-interstitial clustering

2007 · Johann Schermer, Peter Pichler, et al. · European Solid-State Device Research Conference · 5

High Dopant Activation And Low Damage P+ USJ Formation

2006 · John Borland, Seiichi Shishiguchi, et al. · AIP conference proceedings · 5

Passivated Impedimetric Sensors for Immobilization-Free Pathogen Detection by Isothermal Amplification and Melt Curve Analysis

2022 · Matthias Steinmaßl, Jamila Boudaden, et al. · Biosensors · 4

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Works count: 68

Citation count: 481

H-index: 11

I10-index: 12