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J.-L. Ogier

New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
1998 · R. Degraeve, G. Groeseneken, et al. · IEEE Transactions on Electron Devices · 676
A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown
1998 · R. Degraeve, J.L. Ogier, et al. · IEEE Transactions on Electron Devices · 132
Truly Innovative 28nm FDSOI Technology for Automotive Micro-Controller Applications embedding 16MB Phase Change Memory
2018 · F. Arnaud, P. Zuliani, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 95
High Density Embedded PCM Cell in 28nm FDSOI Technology for Automotive Micro-Controller Applications
2020 · F. Arnaud, P. Ferreira, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 54
On the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown
1996 · R. Degraeve, J.L. Ogier, et al. · IEEE International Reliability Physics Symposium proceedings · 49
Soft errors induced by natural radiation at ground level in floating gate flash memories
2013 · G. Just, J. L. Autran, et al. · IEEE International Reliability Physics Symposium proceedings · 21
Push the flash floating gate memories toward the future low energy application
2012 · V. Della Marca, G. Just, et al. · Solid-State Electronics · 18
A new polarity dependence of the reduced trap generation during high-field degradation of nitrided oxides
2002 · R. Degraeve, J. De Blauwe, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 17
Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories
2014 · V. Della Marca, J. Postel-Pellerin, et al. · Microelectronics Reliability · 16
Matching degradation of threshold voltage and gate voltage of NMOSFET after Hot Carrier Injection stress
2011 · Y. Joly, L. Lopez, et al. · Microelectronics Reliability · 16
A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions
1996 · R. Degraeve, Ph. Roussel, et al. · Microelectronics Reliability · 9
Data retention under gate stress on a NVM array
2012 · R. Djenadi, G. Micolau, et al. · Solid-State Electronics · 8
Octagonal MOSFET: Reliable device for low power analog applications
2011 · Y. Joly, L. Lopez, et al. · European Solid-State Device Research Conference · 8
Assessment of temperature and voltage accelerating factors for 2.3–3.2nm SiO2 thin oxides stressed to hard breakdown
2007 · D. Pic, D. Goguenheim, et al. · Microelectronics Reliability · 8
Oxide reliability below 3nm for advanced CMOS: Issues, characterization, and solutions
2007 · D. Goguenheim, D. Pic, et al. · Microelectronics Reliability · 8
On the Polarity Dependence of Oxide Breakdown in MOS-Devices with N+ and P+ Polysilicon Gate
1996 · J.-L. Ogier, R. Degraeve, et al. · European Solid-State Device Research Conference · 7
Effect of AC stress on oxide TDDB and trapped charge in interface states
2014 · B. Rebuffat, P. Masson, et al. · International Symposium on Integrated Circuits · 6
Experimental study to push the Flash floating gate memories toward low energy applications
2011 · V. Della Marca, A. Regnier, et al. · International Semiconductor Device Research Symposium · 6
An experimental method allowing quantifying and localizing failed cells of an EEPROM CAST after a retention test
2008 · C. Le Roux, L. Lopez, et al. · Solid-State Electronics · 6
A new method to quantify retention-failed cells of an EEPROM CAST
2007 · C. Le Roux, L. Lopez, et al. · Microelectronics Reliability · 6
Degradation mechanism during gate stress at high electrical field on high voltage MOSFET for non-volatile memory applications
2014 · M. Carmona, L. Lopez, et al. · IEEE International Integrated Reliability Workshop final report · 5
An evaluation of the extrinsic cells number in a memory array using cross-correlation products and deconvolution: an instance of a microelectronics experimental inverse problem
2011 · G. Micolau, J. Postel-Pellerin, et al. · Inverse Problems in Science and Engineering · 5
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Analysis of the Early-Failure Rate Prediction of Time-Dependent-Dielectric Breakdown in Thin Oxides
1995 · J.-L. Ogier, R. Degraeve, et al. · European Solid-State Device Research Conference · 5
Relaxation effect on cycling on NOR flash memories
2015 · B. Rebuffat, J-L. Ogier, et al. · IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) · 4
Access resistor modelling for EEPROM’s retention test vehicle
2013 · P. Canet, J. Postel-Pellerin, et al. · Microelectronics Reliability · 4
Works count: 47
Citation count: 1,232
H-index: 10
I10-index: 10
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