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Electrical investigation of V-defects in GaN using Kelvin probe and conductive atomic force microscopy

2008 · A. Lochthofen, W. Mertin, et al. · Applied Physics Letters · 31

Industrial production of GaN and InGaN-light emitting diodes on SiC-substrates

2001 · U. Zehnder, A. Weimar, et al. · Journal of Crystal Growth · 30

Transmission electron microscopy and reflected high-energy electron-diffraction investigation of plastic relaxation in doped and undoped ZnSe/GaAs(001)

1996 · A. Rosenauer, T. Reisinger, et al. · Journal of Applied Physics · 30

Low-pressure metalorganic vapor phase epitaxy of ZnSe-based light emitting diodes

1994 · H. Stanzl, K. Wolf, et al. · Journal of Crystal Growth · 30

Investigation of the carrier distribution in InGaN‐based multi‐quantum‐well structures

2011 · B. Galler, A. Laubsch, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 23

Temperature dependence of stresses in GaN thin films grown on (0001) sapphire: Modeling of thermal stresses

2001 · J. Keckes, J. W. Gerlach, et al. · Applied Physics Letters · 21

InGaN on SiC LEDs for High Flux and High Current Applications

2002 · J. Baur, B. Hahn, et al. · physica status solidi (a) · 20

Quasiphase matched second harmonic generation in ZnSe waveguide structures modulated by focused ion beam implantation

1998 · M. Kühnelt, T. Leichtner, et al. · Applied Physics Letters · 19

ZnSe‐Based MOVPE and MBE Grown LEDs

1995 · H. Stanzl, T. Reisinger, et al. · physica status solidi (b) · 19

Green high‐power light sources using InGaN multi‐quantum‐well structures for full conversion

2011 · B. Galler, M. Sabathil, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 18

Composition dependent determination of band offsets in and SQW by optical means

1996 · S. Lankes, T. Reisinger, et al. · Journal of Crystal Growth · 17

Light emitting diodes from MOVPE-grown p- and n-doped II–VI compounds

1996 · W. Gebhardt, B. Hahn, et al. · Journal of Crystal Growth · 17

First European GaN-Based Violet Laser Diode

2000 · S. Bader, B. Hahn, et al. · physica status solidi (a) · 16

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High-power InGaN LEDs: present status and future prospects

2008 · B. Hahn, A. Weimar, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 15

Temperature‐dependent photoluminescence measurements on a sub‐micrometer length scale on green light emitting InGaN/GaN quantum wells

2010 · J. Danhof, C. Vierheilig, et al. · physica status solidi (b) · 14

Works count: 57

Citation count: 1,046

H-index: 19

I10-index: 27