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Yusuke Komura
Institution:
Semiconductor Energy Laboratory (Japan)
Observed institutions:
Semiconductor Energy Laboratory (Japan),
Nagoya University
OpenAlex ID:
A5109699452
Preparation of nanocrystalline cubic silicon carbide thin films by hot-wire CVD at various filament-to-substrate distances
2007
·
Akimori Tabata
, Yusuke Komura
·
Surface and Coatings Technology
·
27
Film Properties of Nanocrystalline 3C–SiC Thin Films Deposited on Glass Substrates by Hot-Wire Chemical Vapor Deposition Using CH4 as a Carbon Source
2007
·
Yusuke Komura
, Akimori Tabata
, et al.
·
Japanese Journal of Applied Physics
·
26
PDF
Influence of gas pressure on low-temperature preparation and film properties of nanocrystalline 3C-SiC thin films by HW-CVD using SiH4/CH4/H2 system
2007
·
Yusuke Komura
, Akimori Tabata
, et al.
·
Thin Solid Films
·
24
Growth of silicon carbide thin films by hot-wire chemical vapor deposition from SiH4/CH4/H2
2009
·
Akimori Tabata
, Yusuke Komura
, et al.
·
Thin Solid Films
·
18
Properties of Nanocrystalline Cubic Silicon Carbide Thin Films Prepared by Hot-Wire Chemical Vapor Deposition Using SiH4/CH4/H2 at Various Substrate Temperatures
2008
·
Akimori Tabata
, Yusuke Komura
, et al.
·
Japanese Journal of Applied Physics
·
14
Importance of H2 gas for growth of hot-wire CVD nanocrystalline 3C-SiC from SiH4/CH4/H2
2009
·
Yoshiki Hoshide
, Yusuke Komura
, et al.
·
Thin Solid Films
·
13
1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs
2024
·
Takeya Hirose
, Yuki Okamoto
, et al.
·
IEEE Journal of the Electron Devices Society
·
12
PDF
32‐3: 1.5‐inch, 3207‐ppi Side‐by‐Side OLED Display Capable of 32‐Division Driving with OSLSI/SiLSI Structure Fabricated by Photolithography
2022
·
Munehiro Kozuma
, Yuki Okamoto
, et al.
·
SID Symposium Digest of Technical Papers
·
12
Heterogeneous Oxide Semiconductor FETs Comprising Planar FET and Vertical Channel FETs Monolithically Stacked on Si CMOS, Enabling 1-Mbit 3D DRAM
2024
·
Hiroki Inoue
, Takeya Hirose
, et al.
·
IEEE International Memory Workshop (IMW)
·
6
OLED Microdisplay With Monolithically Integrated CAAC-OS FET and Si CMOS Achieved by Two-Dimensionally Arranged Silicon Display Drivers
2024
·
Munehiro Kozuma
, Yusuke Komura
, et al.
·
IEEE Journal of the Electron Devices Society
·
5
PDF
Demonstration of scaling and monolithic stacking for higher integration of integrated circuit using c-axis aligned crystalline oxide semiconductor FET
2024
·
Hiromi Sawai
, Motomu Kurata
, et al.
·
Japanese Journal of Applied Physics
·
3
P‐151: Late‐News Poster: 1.5‐inch, 3207‐ppi Foveated Display with OLED/OS/Si Structure Capable of 32‐Division Control of Resolution and Frame Rate
2023
·
Yuki Tamatsukuri
, Shoki Miyata
, et al.
·
SID Symposium Digest of Technical Papers
·
3
Preparation of Nanocrystalline Silicon Carbide Thin Films by Hot-Wire Chemical Vapor Deposition at Various Filament Temperature
2006
·
Akimori Tabata
, Yusuke Komura
, et al.
·
World Conference on Photovoltaic Energy Conversion
·
3
Two-Dimensionally Arranged Display Drivers Achieved by OS/Si Structure
2023
·
Yusuke Komura
, Shoki Miyata
, et al.
·
IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
·
1
Feasibility Study for 32-level cell using Memory with 13.5-V 0.5-um OSFET Monolithically Stacked on 13.5-V 1.6-um CMOSFET
2022
·
Hiroki Inoue
, Shoki Miyata
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
NAND Memory Composed of Crystalline In-Ga-Zn Oxide FETs with Endurance of over 1013 Cycles at 20-ns Write Time without Batch Erase
2022
·
Shoki Miyata
, Satoru Oshita
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
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Works count:
16
Citation count:
167
H-index:
8
I10-index:
8
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