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Dan Denninghoff

Observed names: D. Denninghoff, D.J. Denninghoff, Daniel J Denninghoff, Daniel J. Denninghoff
ORCID: 0009-0007-8216-0065
Observed ORCID: 0009-0007-8216-0065
OpenAlex ID: A5109859943
Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices
2007 · Gregg H. Jessen, Robert C. Fitch, et al. · IEEE Transactions on Electron Devices · 350
N-polar GaN epitaxy and high electron mobility transistors
2013 · Man Hoi Wong, Stacia Keller, et al. · Semiconductor Science and Technology · 226
A Novel 100 MHz–45 GHz Input-Termination-Less Distributed Amplifier Design With Low-Frequency Low-Noise and High Linearity Implemented With A 6 Inch $0.15~ {\mu }\text{m}$ GaN-SiC Wafer Process Technology
2016 · Kevin W. Kobayashi, Dan Denninghoff, et al. · IEEE Journal of Solid-State Circuits · 84
Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High $f_{\max}$
2012 · Daniel J. Denninghoff, Sansaptak Dasgupta, et al. · IEEE Electron Device Letters · 64
Engineering the (In, Al, Ga)N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors
2014 · Jing Lu, Xun Zheng, et al. · Applied Physics Letters · 36
A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications
2023 · Nicholas C. Miller, Andrea Arias-Purdue, et al. · IEEE Journal of Microwaves · 34
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N-polar GaN/InAlN MIS-HEMT with 400-GHz ƒmax
2012 · D. Denninghoff, J. Lu, et al. · Conference digest · 34
N-polar GaN/InAlN/AlGaN MIS-HEMTs with 1.89 S/mm extrinsic transconductance, 4 A/mm drain current, 204 GHz fT and 405 GHz fmax
2013 · D. Denninghoff, J. Lu, et al. · Conference digest · 28
Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition
2013 · Jing Lu, Dan Denninghoff, et al. · Applied Physics Letters · 26
Enhancement-Mode $m$-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al$_{2}$O$_{3}$ Deposited by Atomic Layer Deposition
2011 · Tetsuya Fujiwara, Ramya Yeluri, et al. · Applied Physics Express · 20
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Adaptable 40 nm GaN T-Gate MMIC Processes for Millimeter-Wave Applications
2023 · D. Denninghoff, E. Arkun, et al. · IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) · 9
Surmounting W-band Scalar Load-Pull Limitations Using the ASM-HEMT Model for Millimeter-Wave GaN HEMT Technology Large-Signal Assessment
2022 · Nicholas C. Miller, Michael Elliott, et al. · ARFTG Microwave Measurement Conference · 8
A Novel 100 MHz-45 GHz GaN HEMT Low Noise Non-Gate-Terminated Distributed Amplifier Based on a 6-Inch 0.15µm GaN-SiC mm-Wave Process Technology
2015 · Kevin W. Kobayashi, Dan Denninghoff, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 8
Millimeter-Wave Gallium Nitride Maturation of 40nm T3 Gallium Nitride Monolithic Microwave Integrated Circuit Process
2023 · David Fanning, Andrea Corrion, et al. · IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) · 7
W-band fully passivated AlN/GaN HEMT device with 56% power-added efficiency and 780 mW/mm output power density at 94 GHz
2023 · F. Erdem Arkun, Dan Denninghoff, et al. · Conference digest · 6
N-polar GaN HEMTs with fmax > 300 GHz using high-aspect-ratio T-gate design
2011 · D.J. Denninghoff, S. Dasgupta, et al. · Conference digest · 5
Autonomous power-scavenging MEMS robots
2005 · D.J. Denninghoff, L.A. Starman, et al. · IEEE International Midwest Symposium on Circuits and Systems (MWSCAS) · 3
Investigating Thermal Effects and Mitigation Strategies in Multi-Finger GaN HEMTs
2024 · Amirreza G. Avval, Soheil Nouri, et al. · International Microwave and Antenna Symposium (IMAS) · 2
Enabling Monolithic Integration of an Advanced 7-Layer Silicon Back-End-of-Line (BEOL) on 40nm GaN for Next Generation MMICs
2024 · Jonathan Roderick, George Siddiqi, et al. · IEEE MTT-S International Microwave Symposium digest · 2
Low-Noise and High-Survivability 55–65-GHz GaN MMIC LNA for Millimeter-Wave Communications
2025 · Michael Coffey, Cornelius Chin, et al. · IEEE Microwave and Wireless Technology Letters · 1
Reliable Graded-Channel GaN-on-SiC Technology With Record Performance up to 110 GHz
2026 · Andrea Arias-Purdue, Dan Denninghoff, et al. · IEEE Microwave and Wireless Technology Letters
Impact of Scaling on the Temperature Dependence of GaN HEMTs
2026 · Biddut K. Sarker, Leonard A. Duncan, et al. · IEEE Electron Device Letters
Compact 8-way Spatium Power Combiner for Microwave to Millimeter-wavelength Frequency
2018 · Soack Dae Yoon, Eric M. Jackson, et al.
A Novel 0.1-44 GHz Linear Common-Drain-Cascode 0.15µm GaN Distributed Amplifier Architecture with Improved IP3-BW
2016 · Kevin W. Kobayashi, Dan Denninghoff, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium
Enhancement-Mode $m$-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al
2011 · T. Fujiwara, Ramya Yeluri, et al. · Applied Physics Express
Works count: 25
Citation count: 953
H-index: 10
I10-index: 10
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