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Tien-Hao Tang
Observed names:
T.H. Tang,
Tien-hao Tang
Institution:
United Microelectronics (Taiwan)
Observed institutions:
United Microelectronics (Taiwan),
United Microelectronics (United States)
OpenAlex ID:
A5110257199
Low-leakage diode string designs using triple-well technologies for RF-ESD applications
2003
·
Shiao-Shien Chen
, Tung-Yang Chen
, et al.
·
IEEE Electron Device Letters
·
26
Hot carrier degradation in novel strained-Si nMOSFETs
2004
·
M.F. Lu
, S. Chiang
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
19
Using layout technique and direct-tunneling mechanism to promote DC performance of partially depleted SOI devices
2004
·
Shiao-Shien Chen
, Shiang Huang-Lu
, et al.
·
IEEE Transactions on Electron Devices
·
13
Latch-up free ESD protection design with SCR structure in advanced CMOS technology
2011
·
Chang-Tzu Wang
, Tien-Hao Tang
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
10
High-robust ESD protection structure with embedded SCR in high-voltage CMOS process
2008
·
Tai-Hsiang Lai
, Ming-Dou Ker
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
10
ESD protection design with lateral DMOS transistor in 40-V BCD technology
2010
·
Chang-Tzu Wang
, Ming-Dou Ker
, et al.
·
IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
·
6
Design of High-Voltage-Tolerant Power-Rail ESD Clamp Circuit in Low-Voltage CMOS Processes
2007
·
Ming-Dou Ker
, Chang-Tzu Wang
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
6
Characteristics of low-leakage deep-trench diode for ESD protection design in 0.18-μm SiGe BiCMOS process
2003
·
Shiao-Shien Chen
, Tung-Yang Chen
, et al.
·
IEEE Transactions on Electron Devices
·
6
Investigation of a SiGe HBT during ESD stress in a 0.18-μm SiGe BiCMOS process
2003
·
Shiao-Shien Chen
, Tung-Yang Chen
, et al.
·
IEEE Electron Device Letters
·
5
Design of modified ESD protection structure with low-trigger and high-holding voltage in embedded high voltage CMOS process
2011
·
Tai-Hsiang Lai
, Lu-An Chen
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
4
Investigation of ESD devices in 0.18 μm SiGe BiCMOS process
2003
·
Shiao-Shien Chen
, Tung-Yang Chen
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
4
Optimization of PESD implant design for ESD robustness of 5V drain-back N-LDMOSFET
2016
·
Chun Chiang
, Ping-Chen Chang
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
3
ESD Robustness of 40-V CMOS Devices With/Without Drift Implant
2006
·
Wei-jen Chang
, Ming-dou Ker
, et al.
·
IEEE International Integrated Reliability Workshop final report
·
3
Low-trigger ESD protection design with latch-up immunity for 5-V CMOS application by drain engineering
2017
·
Chun Chiang
, Ping-Chen Chang
, et al.
·
IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
·
2
Latch-up issue of drain metal connection split in test circuit with 3D TCAD simulation analysis in CMOS application
2019
·
Chun Chiang
, Ping-Chen Chang
, et al.
·
Solid State Electronics Letters
·
1
PDF
A novel high level ESD FDNSCR with drain side engineering in PMIC application
2015
·
Yi-Ning He
, Jhih-Ming Wang
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
1
ESD protection design with adjustable snapback behavior for 5-V application in 100nm CMOS process
2013
·
Chang-Tzu Wang
, Yu-Chun Chen
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
1
The modified P+ electrode layout schemes to enhance esd robustness of SCR structure for PMIC applications
2011
·
Lu-An Chen
, Chang-Tzu Wang
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
1
ESD investigation of pn junction diodes in silicon-germanium heterojunction bipolar transistor
2003
·
C.H. Chou
, S.S. Chen
, et al.
·
Electronics Letters
·
1
Lower trigger voltage design for ESD protection device applied in PMIC application
2014
·
Yi-Ning He
, Lu-An Chen
, et al.
·
IEEE International Reliability Physics Symposium proceedings
Low-leakage electrostatic discharge protection circuit in 65-nm fully-silicided CMOS technology
2009
·
Chang-Tzu Wang
, Ming-Dou Ker
, et al.
·
IEEE International Conference on IC Design and Technology (ICICDT)
The Impact of N-Drift Implant on ESD Robustness of High-Voltage NMOS with Embedded SCR Structure in 40-V CMOS Process
2007
·
Wei-Jen Chang
, Ming-Dou Ker
, et al.
·
IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Reliability investigations on a unique direct-tunneling-induced high performance partially-depleted SOI PMOS device
2004
·
Shiao-Shien Chen
, Shiang Huang-Lu
, et al.
·
IEEE International Reliability Physics Symposium proceedings
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Works count:
23
Citation count:
122
H-index:
6
I10-index:
5
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