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Kouichirou Honda
Observed name:
Kouichirou HONDA
Institution:
Fujitsu (Japan)
Observed institution:
Fujitsu (Japan)
OpenAlex ID:
A5110338162
Breakdown in silicon oxides—correlation with Cu precipitates
1984
·
Kouichirou Honda
, Akira Ohsawa
, et al.
·
Applied Physics Letters
·
106
Breakdown in silicon oxides (II)—correlation with Fe precipitates
1985
·
Kouichirou Honda
, Akira Ohsawa
, et al.
·
Applied Physics Letters
·
60
Catastrophic breakdown in silicon oxides: The effect of Fe impurities at the SiO2-Si interface
1987
·
Kouichirou Honda
, Toshirou Nakanishi
, et al.
·
Journal of Applied Physics
·
58
Metal Impurities near the SiO2 ‐ Si Interface
1984
·
Akira Ohsawa
, Kouichirou Honda
, et al.
·
Journal of The Electrochemical Society
·
55
PDF
Influence of carbon and oxygen on donor formation at 700 °C in Czochralski-grown silicon
1982
·
Akira Ohsawa
, Ritsuo Takizawa
, et al.
·
Journal of Applied Physics
·
35
Behavior of Fe Impurity during HCl Oxidation
1995
·
Kouichirou Honda
, Akira Ohsawa
, et al.
·
Journal of The Electrochemical Society
·
17
PDF
Silicon surface roughness—Structural observation by reflection electron microscopy
1986
·
Kouichirou Honda
, Akira Ohsawa
, et al.
·
Applied Physics Letters
·
14
Influence of Ni impurities at the Si-SiO2 interface on the metal-oxide-semiconductor characteristics
1994
·
Kouichirou Honda
, Toshiro Nakanishi
·
Journal of Applied Physics
·
10
Instrument measuring temperature dependence of minority-carrier lifetime without contact
1983
·
Akira Ohsawa
, Kouichirou Honda
, et al.
·
Review of Scientific Instruments
·
10
Ultraclean Technique for Silicon Wafer Surfaces with HNO3-HF Systems
1988
·
Ritsuo Takizawa
, Toshiro Nakanishi
, et al.
·
Japanese Journal of Applied Physics
·
9
PDF
Reflection electron microscopy observation of the Si-SiO2 interface
1988
·
Kouichirou Honda
, Ritsuo Takizawa
, et al.
·
Journal of Applied Physics
·
5
Donor-related microdefects at surface of denuded zone in Czochralski-grown silicon
1983
·
Ritsuo Takizawa
, Akira Ohsawa
, et al.
·
Applied Physics Letters
·
3
Clean Silicon Wafer Surface by a Slight Etch Method
1988
·
Ritsuo Takizawa
, Toshiro Nakanishi
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
·
1
New oxygen donors formed at 700 °C in silicon
1983
·
Akira Ohsawa
, Ritsuo Takizawa
, et al.
·
Microelectronic Engineering
·
1
Ultraclean Technique for Silicon Wafer Surfaces with HNO_3-HF Systems : Materials and Device Structures with Atomic Scale Resolution( Solid State Devices and Materials 1)
1988
·
Ritsuo Takizawa
, Toshiro Nakanishi
, et al.
·
Japanese Journal of Applied Physics
Reflection electron microscopy observation of the silicon wafer surface.
1988
·
Kouichirou HONDA
, Akira OHSAWA
·
Shinku
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Works count:
16
Citation count:
384
H-index:
9
I10-index:
9
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