2018 · P. M. L. Hedberg, P. Peres, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 22

Investigation of the quasi‐simultaneous arrival (QSA) effect on a CAMECA IMS 7f‐GEO

2017 · Clive Jones, David A. Fike, et al. · Rapid Communications in Mass Spectrometry · 15

Toward accurate in-depth profiling of As and P ultra-shallow implants by SIMS

2004 · A. Merkulov, E. de Chambost, et al. · Applied Surface Science · 15

Dynamic SIMS for materials analysis in nuclear science

2018 · Paula Peres, Seo-Youn Choi, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 14

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Round-robin study of arsenic implant dose measurement in silicon by SIMS

2006 · D. Simons, K. Kim, et al. · Applied Surface Science · 11

CAMECA IMS 7f-GEO: Specialized SIMS tool for geosciences

2008 · Paula Peres, Emmanuel de Chambost, et al. · Applied Surface Science · 9

Advanced SIMS quantification in the first few nm of B, P and As ultrashallow implants

2010 · A. Merkulov, P. Peres, et al. · Surface and Interface Analysis · 8

Latest developments for the CAMECA ULE-SIMS instruments: IMS Wf and SC-Ultra

2004 · E. de Chambost, A. Merkulov, et al. · Applied Surface Science · 7

SIMS analytical technique for PV applications

2010 · P. Peres, A. Merkulov, et al. · Surface and Interface Analysis · 6

Improvement of extra low impact energy SIMS data reduction algorithm for process control

2020 · Alexandre Merkulov, Paula Peres, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 5

Characterization of LED materials using dynamic SIMS

2012 · P. Peres, A. Merkulov, et al. · Surface and Interface Analysis · 5

Quantitative low energy depth profiling of SiGe laterally nonuniform structures

2018 · Alexander Merkulov, Paula Peres, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 3

Accurate in depth profiling of As and P shallow implants by secondary ion mass spectroscopy

2004 · E. de Chambost, A. Merkulov, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 3

Automated Dose and Dopant Level Monitoring by SIMS

2006 · Hans Maul, Norbert Loibl, et al. · AIP conference proceedings · 2

Dynamic SIMS analytical methods for optimized detection limits of atmospheric species

2023 · S.-Y. Choi, K. Soulard, et al. · ASMC proceedings · 1

LA-WATAP and SIMS as Complementary Techniques for Quantitative Measurement of Nnanometer Structures

2008 · L Renaud, I Martin, et al. · Microscopy and Microanalysis · 1

Metrology for Ion Implantation Process Control

2026 · Mathias Rommel, Nikolay Cherkashin, et al. · Topics in applied physics

Impact of Implantation Conditions on the In-Depth Distribution of Implanted Species in SiC and GaN

2024 · Laura Creon, Jinlei Ren, et al. · ASMC proceedings

Triple Oxygen Isotope Measurements by Multi-Collector Large-Geometry Secondary Ion Mass Spectrometry

2021 · Paula Peres, Nordine Bouden, et al. · Goldschmidt Abstracts

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Works count: 32

Citation count: 369

H-index: 11

I10-index: 11