Author

Yu. P. Yakovlev

Observed names: Y P Yakovlev, Y Yakovlev, Y. P. Yakovlev, Y. Yakovlev, Y.P. Yakovlev, Yakovlev Yu P, Yakovlev Yu. P., Yakovlev Yu.P., Yakovlev, Y, Yakovlev, Y P, Yakovlev, Y., Yakovlev, Y. P., Yakovlev, Yu P., Yakovlev, Yu., Yakovlev, Yu. P., Yu P Yakovlev, Yu P. Yakovlev, Yu Yakovlev, Yu. I. Yakovlev, Yu. P. YAKOVLEV, Yu. Yakovlev, Yu.P Yakovlev, Yu.P. YAKOVLEV, Yu.P. Yakovlev, Ю П Яковлев, Ю.П. Яковлев, Яковлев, Ю. П., Яковлев, Ю.П.

Institution: Ioffe Institute

Observed institutions: Centre National de la Recherche Scientifique, Russian Academy of Sciences, Université de Montpellier, Saint Petersburg State Electrotechnical University, Physico-Technical Institute, Czech Academy of Sciences, Heyrovsky Institute, Institut d'Électronique et des Systèmes, Université Montpellier 2, Academy of Sciences of the Soviet Union, Lancaster University, Ioffe Institute

OpenAlex ID: A5110821882

Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions

2004 · M P Mikhailova, K D Moiseev, et al. · Semiconductor Science and Technology · 66

Powerful mid-infrared light emitting diodes forpollution monitoring

1997 · A.A. Popov, V.V. Sherstnev, et al. · Electronics Letters · 58

InSb/InAs quantum dots grown by liquid phase epitaxy

2007 · K. D. Moiseev, Ya. A. Parkhomenko, et al. · Technical Physics Letters · 48

2.7–3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers

1994 · A. N. Baranov, A. N. Imenkov, et al. · Applied Physics Letters · 43

Discovery of III–V Semiconductors: Physical Properties and Application

2019 · M. P. Mikhailova, K. D. Moiseev, et al. · Semiconductors · 42

Experimental observation of whispering gallery modes in sector disk lasers

2008 · Astakhova, A. P., Monakhov, A. A., et al. · HAL · 39

High power 4.6 µm light emitting diodes for CO detection

1999 · A Krier, H H Gao, et al. · Journal of Physics D Applied Physics · 38

Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate

2009 · K. D. Moiseev, Ya. A. Parkhomenko, et al. · Semiconductors · 31

1999 · H H Gao, A Krier, et al. · Journal of Physics D Applied Physics · 30

Light-emitting diodes based on GaSb alloys for the 1.6–4.4 μm mid-infrared spectral range

2005 · T. N. Danilova, B. E. Zhurtanov, et al. · Semiconductors · 25

A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy

2003 · S. V. Ivanov, V. A. Kaygorodov, et al. · Applied Physics Letters · 22

InAsSbP/InAs lasers (2.9 μm) for spectroscopy of ammonia: low temperature investigations

1998 · A Popov, V Sherstnev, et al. · Spectrochimica Acta Part A Molecular and Biomolecular Spectroscopy · 22

Interface electroluminescence of confined carriers in type II broken-gap single heterojunction

1996 · M.P Mikhailova, G.G Zegrya, et al. · Solid-State Electronics · 21

Wet sulfur passivation of GaSb(100) surface for optoelectronic applications

2010 · E.V. Kunitsyna, T.V. L’vova, et al. · Applied Surface Science · 20

High-speed photodiodes for the mid-infrared spectral region 1.2–2.4 μm based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a transmission band of 2–5 GHz

2013 · I. A. Andreev, O. Yu. Serebrennikova, et al. · Semiconductors · 17

Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy

2001 · S. V. Ivanov, V. A. Solov’ev, et al. · Applied Physics Letters · 17

Interface-induced phenomena in type II antimonide–arsenide heterostructures

1998 · M.P. Mikhailova, Yu.P. Yakovlev, et al. · IEE Proceedings - Optoelectronics · 17

Narrow gap III–V materials for infrared photodiodes and thermophotovoltaic cells

2010 · E.V. Kunitsyna, I.A. Andreev, et al. · Optical Materials · 16

InAsSb light-emitting diodes for the detection of CO2 (λ=4.3 μm)

1998 · A. A. Popov, M. V. Stepanov, et al. · Technical Physics Letters · 16

3.3-μm LEDs for measuring methane

1997 · A. A. Popov, M. V. Stepanov, et al. · Technical Physics Letters · 16

High-efficiency GaInAsSb/GaAlAsSb photodiodes for 0.9-to 2.55-µm spectral range with a large-diameter active area

2003 · I. A. Andreev, N. D. Il’inskaya, et al. · Semiconductors · 15

Solid solution InxGa1−x AsySbzP1−y−z : A new material for infrared optoelectronics. I. Thermodynamic analysis of the conditions for obtaining solid solutions, isoperiodic to InAs and GaSb substrates, by liquid-phase epitaxy

1997 · N. A. Charykov, A. M. Litvak, et al. · Semiconductors · 14

Lasers And Avalanche Photodiodes For IR Fiber Optics In The 2-2,5 µm Spectral Range

1989 · A. N. Baranov, A. N. Imenkov, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 14

Superlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells

2012 · M. P. Mikhailova, E. V. Ivanov, et al. · Journal of Applied Physics · 13

High-efficiency LEDs of 1.6–2.4 µm spectral range for medical diagnostics and environment monitoring

2003 · N. D. Stoyanov, B. E. Zhurtanov, et al. · Semiconductors · 13

Works count: 386

Citation count: 1,609

H-index: 17

I10-index: 48