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A. V. Lunev

AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
2012 · Max Shatalov, Wenhong Sun, et al. · Applied Physics Express · 478
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InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
1999 · V. M. Ustinov, N. A. Maleev, et al. · Applied Physics Letters · 389
High power AlGaN ultraviolet light emitters
2014 · Max Shatalov, Wenhong Sun, et al. · Semiconductor Science and Technology · 179
AlGaN Deep-Ultraviolet Light-Emitting Diodes
2005 · Jianping Zhang, Xuhong Hu, et al. · Japanese Journal of Applied Physics · 112
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AlGaN-based 280nm light-emitting diodes with continuous-wave power exceeding 1mW at 25mA
2004 · J. P. Zhang, X. Hu, et al. · Applied Physics Letters · 109
Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power
2010 · W. Sun, M. Shatalov, et al. · Applied Physics Letters · 107
Gain characteristics of quantum dot injection lasers
1999 · A E Zhukov, A R Kovsh, et al. · Semiconductor Science and Technology · 100
Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes
2008 · R. Jain, W. Sun, et al. · Applied Physics Letters · 98
High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser
1998 · M. V. Maximov, Yu. M. Shernyakov, et al. · Journal of Applied Physics · 91
High-quality p–n junctions with quaternary AlInGaN/InGaN quantum wells
2000 · A. Chitnis, A. Kumar, et al. · Applied Physics Letters · 75
Deep ultraviolet light‐emitting diodes
2006 · X. Hu, J. Deng, et al. · physica status solidi (a) · 71
10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes
2004 · Yuriy Bilenko, Alex Lunev, et al. · Japanese Journal of Applied Physics · 60
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Current and optical noise of GaN∕AlGaN light emitting diodes
2006 · S. Sawyer, S. L. Rumyantsev, et al. · Journal of Applied Physics · 48
Band-edge luminescence in quaternary AlInGaN light-emitting diodes
2001 · M. Shatalov, A. Chitnis, et al. · Applied Physics Letters · 46
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Performance and Applications of Deep Uv Led
2012 · M. SHATALOV, A. LUNEV, et al. · International Journal of High Speed Electronics and Systems · 33
Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W
1997 · Yu. M. Shernyakov, A. Yu. Egorov, et al. · Technical Physics Letters · 32
Photo-and electroluminescence in the 1.3-µm wavelength range from quantum-dot structures grown on GaAs substrates
1999 · A. E. Zhukov, A. R. Kovsh, et al. · Semiconductors · 31
Deep‐UV LED controlled AlGaN‐based SAW oscillator
2006 · D. Ciplys, M. S. Shur, et al. · physica status solidi (a) · 29
Effect of the quantum-dot surface density in the active region on injection-laser characteristics
1998 · A. R. Kovsh, A. E. Zhukov, et al. · Semiconductors · 29
247 nm Ultra-Violet Light Emitting Diodes
2007 · Jianyu Deng, Yuriy Bilenko, et al. · Japanese Journal of Applied Physics · 26
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An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix
1996 · Zh. I. Alfërov, Н. А. Берт, et al. · Semiconductors · 26
Deep-ultraviolet light-emitting diodes for frequency domain measurements of fluorescence lifetime in basic biofluorophores
2005 · P. Vita, N. Kurilčik, et al. · Applied Physics Letters · 24
Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C
1997 · M. V. Maksimov, N. Yu. Gordeev, et al. · Semiconductors · 24
Low-frequency noise of GaN-based ultraviolet light-emitting diodes
2005 · S. L. Rumyantsev, S. Sawyer, et al. · Journal of Applied Physics · 19
Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm
1998 · V. M. Ustinov, A. R. Kovsh, et al. · Technical Physics Letters · 19
Works count: 72
Citation count: 2,437
H-index: 23
I10-index: 31
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