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Kazuto Ikeda
Observed names:
Ikeda Kazuto,
K Ikeda,
K. IKEDA,
K. Ikeda,
Kazuto IKEDA
Institution:
Semiconductor Leading Edge Technologies, Inc (Japan)
Observed institutions:
University of Tsukuba,
Waseda University,
Fujitsu (Japan),
International Superconductivity Technology Center,
Semiconductor Technology Academic Research Center (Japan),
Semiconductor Leading Edge Technologies, Inc (Japan),
Fujitsu Semiconductor (Japan)
show all 7
OpenAlex ID:
A5111402044
Raman scattering from spin fluctuations in Pr2−x Cex CuO4−y , Nd2−x Cex CuO4−y , and Sm2−x Cex CuO4−y
1991
·
Izumi Tomeno
, Masashi Yoshida
, et al.
·
Physical review. B, Condensed matter
·
48
Shift of x-ray-photoelectron core levels in Bi2 Sr2 Ca1−x Yx Cu2 Oy : An explanation by bond-valence-sum calculation
1991
·
Rittaporn Itti
, F. Munakata
, et al.
·
Physical review. B, Condensed matter
·
42
High T/sub c/ BiSrCaCuO superconductor grown by CVD technique
1989
·
M. Ihara
, T. Kimura
, et al.
·
IEEE Transactions on Magnetics
·
36
Precise determination of band offsets and chemical states in SiN∕Si studied by photoemission spectroscopy and x-ray absorption spectroscopy
2005
·
S. Toyoda
, J. Okabayashi
, et al.
·
Applied Physics Letters
·
32
Control of oxidation and reduction reactions at HfSiO∕Si interfaces through N exposure or incorporation
2008
·
H. Kamada
, T. Tanimura
, et al.
·
Applied Physics Letters
·
24
Photoelectron spectroscopic study of Ba1−x Rbx BiO3
1991
·
R. Itti
, I. Tomeno
, et al.
·
Physical review. B, Condensed matter
·
22
Mechanism of Hf-silicide formation at interface between poly-Si electrode and HfO2∕Si gate stacks studied by photoemission and x-ray absorption spectroscopy
2006
·
H. Takahashi
, J. Okabayashi
, et al.
·
Journal of Applied Physics
·
19
Single crystal growth and characterization of Bi2Sr2Ca1−xYxCu2Oy by TSFZ method
1991
·
K. Takamuku
, K. Ikeda
, et al.
·
Physica C Superconductivity
·
18
Study of a Negative Threshold Voltage Shift in Positive Bias Temperature Instability and a Positive Threshold Voltage Shift the Negative Bias Temperature Instability of Yttrium-Doped HfO2 Gate Dielectrics
2010
·
Motoyuki Sato
, Satoshi Kamiyama
, et al.
·
Japanese Journal of Applied Physics
·
15
PDF
Chemical‐state‐resolved in‐depth profiles of gate‐stack structures on Si studied by angular‐dependent photoemission spectroscopy
2008
·
S. Toyoda
, J. Okabayashi
, et al.
·
Surface and Interface Analysis
·
15
Annealing-time dependence in interfacial reaction between poly-Si electrode and HfO2∕Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy
2006
·
H. Takahashi
, J. Okabayashi
, et al.
·
Applied Physics Letters
·
15
Electronic structure of the BaV1−x Tix S3 system as studied by photoelectron spectroscopy
1991
·
R. Itti
, T. Wada
, et al.
·
Physical review. B, Condensed matter
·
14
Photoelectron spectroscopic study of ϰ-(BEDT-TTF)2Cu(NCS)2 organic superconductor
1991
·
R. Itti
, H. Mori
, et al.
·
Physica C Superconductivity
·
12
Thermal stability in a-Si/HfSiO(N)/Si gate stack structures studied by photoemission spectroscopy using synchrotron radiation
2008
·
S. Toyoda
, H. Kamada
, et al.
·
Applied Physics Letters
·
10
Advanced Flash Lamp Annealing technology for 22nm and further device
2010
·
Hiroki Kiyama
, Shinichi Kato
, et al.
·
International Workshop on Junction Technology
·
8
Ti-capping technique as a breakthrough for achieving low threshold voltage, high mobility, and high reliability of pMOSFET with metal gate and high-k dielectrics technologies
2009
·
Haruhiko Takahashi
, Hiroshi Minakata
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
8
Negatively charged deep level defects generated by Yttrium and Lanthanum incorporation into HfO2 for Vth adjustment, and the impact on TDDB, PBTI and 1/f noise
2009
·
Motoyuki Sato
, Satoshi Kamiyama
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
8
Suppression of the Phase Transition to C54 TiSi2 due to Epitaxial Growth of C49 TiSi2 on Si(001) Substrates in Silicidation Process
1996
·
Satoshi Komiya
, Hirofumi Tomita
, et al.
·
Japanese Journal of Applied Physics
·
8
PDF
A low-temperature ultrahigh vacuum scanning tunneling microscope system and tunneling spectra of the Bi2212 superconductor
1993
·
Kazuto Ikeda
, Kenshi Takamuku
, et al.
·
Review of Scientific Instruments
·
8
Photoelectron spectroscopic observation of metal-nonmetal transition in Bi2Sr2Ca1−xYxCu2Oy system
1990
·
R Itti
, F Munakata
, et al.
·
Physica B Condensed Matter
·
8
Annealing Study of Bi-Sr-Ca-Cu-O Superconducting Thin Film
1989
·
Kazuto Ikeda
, Kotaro Gotoh
, et al.
·
Japanese Journal of Applied Physics
·
8
PDF
Analysis of x‐ray irradiation effect in high‐ k gate dielectrics by time‐dependent photoemission spectroscopy using synchrotron radiation
2008
·
T. Tanimura
, S. Toyoda
, et al.
·
Surface and Interface Analysis
·
7
Depth profiling of chemical states and charge density in HfSiON by photoemission spectroscopy using synchrotron radiation
2008
·
T. Tanimura
, S. Toyoda
, et al.
·
Applied Physics Letters
·
7
Atomic resolution scanning tunneling spectroscopic studies of Bi2Sr2CaCu2Oy single crystals
1992
·
Kazuto Ikeda
, Kenshi Takamuku
, et al.
·
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
·
7
Ultrahigh vacuum STM studies of the Bi–O surface of Bi2212
1992
·
Kazuto Ikeda
, Kenshi Takamuku
, et al.
·
Journal of materials research/Pratt's guide to venture capital sources
·
7
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Works count:
83
Citation count:
507
H-index:
12
I10-index:
14
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