Work

Chemical‐state‐resolved in‐depth profiles of gate‐stack structures on Si studied by angular‐dependent photoemission spectroscopy

Year: 2008

Type: article

Source: Surface and Interface Analysis

DOI: 10.1002/sia.2997

Authors: S. Toyoda, J. Okabayashi, M. Oshima, G. L. Liu, Z. Liu, K. Ikeda, K. Usuda

Institutions: Japan Science and Technology Agency, The University of Tokyo, Semiconductor Technology Academic Research Center (Japan)

Language: English

Topic: Electron and X-Ray Spectroscopy Techniques

Subfield: Surfaces, Coatings and Films

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Japan Society for the Promotion of Science

OpenAlex ID: W2139555195

FWCI: 1.198

Cites: 14

Cited by: 15

Related to: 10