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Larry B. Rowland

Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition
1995 · E. R. Glaser, T. A. Kennedy, et al. · Physical review. B, Condensed matter · 330
Microstructural characterization of α-GaN films grown on sapphire by organometallic vapor phase epitaxy
1995 · W. Qian, M. Skowronski, et al. · Applied Physics Letters · 288
Dislocation conversion in 4H silicon carbide epitaxy
2002 · S. Ha, P. Mieszkowski, et al. · Journal of Crystal Growth · 237
SiC materials-progress, status, and potential roadblocks
2002 · A.R. Powell, L.B. Rowland · Proceedings of the IEEE · 236
Open-core screw dislocations in GaN epilayers observed by scanning force microscopy and high-resolution transmission electron microscopy
1995 · W. Qian, G. S. Rohrer, et al. · Applied Physics Letters · 219
Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors
1997 · A.K. Agarwal, S. Seshadri, et al. · IEEE Electron Device Letters · 200
Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors
2003 · A. P. Zhang, L. B. Rowland, et al. · Journal of Electronic Materials · 162
Development of a silicon carbide radiation detector
1998 · F.H. Ruddy, A.R. Dulloo, et al. · IEEE Transactions on Nuclear Science · 157
H, He, and N implant isolation of n-type GaN
1995 · S. C. Binari, H. B. Dietrich, et al. · Journal of Applied Physics · 154
Microwave performance of GaN MESFETs
1994 · S.C. Binari, L.B. Rowland, et al. · Electronics Letters · 152
Demonstration of an SiC neutron detector for high-radiation environments
1999 · S. Seshadri, A.R. Dulloo, et al. · IEEE Transactions on Electron Devices · 141
Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodes
2003 · X. A. Cao, S. F. LeBoeuf, et al. · Applied Physics Letters · 126
1.1 kV 4H-SiC power UMOSFETs
1997 · A.K. Agarwal, J.B. Casady, et al. · IEEE Electron Device Letters · 125
Electrical characterisation of Ti Schottky barrierson n -type GaN
1994 · S.C. Binari, H.B. Dietrich, et al. · Electronics Letters · 120
The role of excess silicon and in situ etching on 4H SiC and 6H SiC epitaxial layer morphology
1996 · A.A. Burk, L.B. Rowland · Journal of Crystal Growth · 97
700-V asymmetrical 4H-SiC gate turn-off thyristors (GTO's)
1997 · A.K. Agarwal, J.B. Casady, et al. · IEEE Electron Device Letters · 81
Observation of nanopipes in α-GaN crystals
1995 · W. Qian, M. Skowronski, et al. · Journal of Crystal Growth · 75
4H-SiC MESFET's with 42 GHz f/sub max/
1996 · S. Sriram, G. Augustine, et al. · IEEE Electron Device Letters · 70
Demonstration of ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes
2005 · Xiangyi Guo, L.B. Rowland, et al. · IEEE Photonics Technology Letters · 67
The effect of GaN and ain buffer layers on GaN film properties grown on both C-plane and A-plane sapphire
1995 · K. Doverspike, L. B. Rowland, et al. · Journal of Electronic Materials · 65
Silicon doping of GaN using disilane
1995 · L. B. Rowland, K. Doverspike, et al. · Applied Physics Letters · 64
4H-SiC power devices for use in power electronic motor control
1998 · J.B Casady, A.K Agarwal, et al. · Solid-State Electronics · 60
Photoluminescence from wurtzite GaN under hydrostatic pressure
1995 · Sangsig Kim, Irving P. Herman, et al. · Applied Physics Letters · 58
Measurement of the Hall scattering factor in 4H and 6H SiC epilayers from 40 to 290 K and in magnetic fields up to 9 T
1998 · G. Rutsch, R. P. Devaty, et al. · Journal of Applied Physics · 57
Stacking-fault formation and propagation in 4H-SiC PiN diodes
2002 · R. E. Stahlbush, M. Fatemi, et al. · Journal of Electronic Materials · 54
Works count: 110
Citation count: 4,409
H-index: 33
I10-index: 58
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