Work

Electrical characterisation of Ti Schottky barrierson n -type GaN

Year: 1994

Type: article

Source: Electronics Letters

DOI: 10.1049/el:19940565

Authors: S.C. Binari, H.B. Dietrich, G. Kelner, L.B. Rowland, K. Doverspike, D.K. Gaskill

Institution: United States Naval Research Laboratory

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2059699771

FWCI: 10.02

Cites: 9

Cited by: 120

Related to: 10