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Kathleen Doverspike

High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
1999 · S.T. Sheppard, K. Doverspike, et al. · IEEE Electron Device Letters · 546
Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition
1995 · E. R. Glaser, T. A. Kennedy, et al. · Physical review. B, Condensed matter · 330
Microstructural characterization of α-GaN films grown on sapphire by organometallic vapor phase epitaxy
1995 · W. Qian, M. Skowronski, et al. · Applied Physics Letters · 288
Open-core screw dislocations in GaN epilayers observed by scanning force microscopy and high-resolution transmission electron microscopy
1995 · W. Qian, G. S. Rohrer, et al. · Applied Physics Letters · 219
H, He, and N implant isolation of n-type GaN
1995 · S. C. Binari, H. B. Dietrich, et al. · Journal of Applied Physics · 154
Microwave performance of GaN MESFETs
1994 · S.C. Binari, L.B. Rowland, et al. · Electronics Letters · 152
GaN FETs for microwave and high-temperature applications
1997 · Steven C. Binari, K. Doverspike, et al. · Solid-State Electronics · 145
Pulsed operation lasing in a cleaved-facet InGaN/GaNMQW SCH laser grown on 6H-SiC
1997 · G.E. Bulman, K. Doverspike, et al. · Electronics Letters · 135
The growth and properties of Al and AlN films on GaN(0001)–(1×1)
1996 · V. M. Bermudez, T. M. Jung, et al. · Journal of Applied Physics · 134
Electrical characterisation of Ti Schottky barrierson n -type GaN
1994 · S.C. Binari, H.B. Dietrich, et al. · Electronics Letters · 120
Magneto-optical studies of GaN and GaN/AlxGa1−xN: Donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance
1996 · Y. J. Wang, R. Kaplan, et al. · Journal of Applied Physics · 112
Low-frequency dispersion characteristics of GaNHFETs
1995 · W. Kruppa, S.C. Binari, et al. · Electronics Letters · 80
Observation of nanopipes in α-GaN crystals
1995 · W. Qian, M. Skowronski, et al. · Journal of Crystal Growth · 75
The effect of GaN and ain buffer layers on GaN film properties grown on both C-plane and A-plane sapphire
1995 · K. Doverspike, L. B. Rowland, et al. · Journal of Electronic Materials · 65
Silicon doping of GaN using disilane
1995 · L. B. Rowland, K. Doverspike, et al. · Applied Physics Letters · 64
Gain characteristics of InGaN/GaN quantum well diode lasers
1998 · Y.-K. Song, M. Kuball, et al. · Applied Physics Letters · 60
Role of localized and extended electronic states in InGaN/GaN quantum wells under high injection, inferred from near-field optical microscopy
1998 · A. Vertikov, A. V. Nurmikko, et al. · Applied Physics Letters · 59
Photoluminescence from wurtzite GaN under hydrostatic pressure
1995 · Sangsig Kim, Irving P. Herman, et al. · Applied Physics Letters · 58
Preparation and characterization of copper zinc germanium sulfide selenide (Cu2ZnGeS4-ySey)
1990 · K. Doverspike, K. Dwight, et al. · Chemistry of Materials · 54
Doping of gallium nitride using disilane
1995 · A. E. Wickenden, L. B. Rowland, et al. · Journal of Electronic Materials · 49
The effect of organometallic vapor phase epitaxial growth conditions on wurtzite GaN electron transport properties
1995 · D. K. Gaskill, A. E. Wickenden, et al. · Journal of Electronic Materials · 39
Luminescence studies of nitrogen- and boron-doped diamond films
1994 · J.A. Freitas, K. Doverspike, et al. · Diamond and Related Materials · 39
The influence of CH4/H2/Ar plasma etching on the conductivity of n-type gallium nitride
1995 · B. Molnar, C. R. Eddy, et al. · Journal of Applied Physics · 31
Preparation and characterization of members of the system La2−xA1+xCu2O6±y where A = Ca,Sr
1989 · K. Doverspike, J-H. Liu, et al. · Journal of Solid State Chemistry · 26
Growth of Silicon-Doped and High Quality, Highly Resistive GaN for FET Applications
1995 · K. Doverspike, A.E. Wickenden, et al. · MRS Proceedings · 25
Works count: 65
Citation count: 3,257
H-index: 25
I10-index: 32
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